EPE Association: EPE 2018 - DS1b: New materials and Active Devices

EPE 2018 - DS1b: New materials and Active Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 01: Devices, Packaging and System Integration > EPE 2018 - DS1b: New materials and Active Devices

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   3.3 kV/450 A SiC MOSFET module - modelling and experiments
By Jacek RABKOWSKI [View]
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Abstract: The paper presents simulation and experimental study focused on performance of a 3.3-kV/450-A SiC half-bridge MOSFET module. At first, series of tests were conducted with the use of single- and double-pulse procedures to determine dynamic parameters of the module. The turn-on process takes around 1,2µs and SiC MOSFETs dissipates 396 mJ when switching at 1800V/450A, while 130 mJ is dissipated during the turn-off process. Afterwards, a simulation model in Saber was developed on the base of manufacturer's preliminary data and adjusted in reference to results of experiments. Then, this model was applied to perform simulations of the module operating in a square-wave-controlled half-bridge inverter. Again, the simulation model was compared to the experimental model of the half-bridge with inductive load. However, the model developed in the Saber MOSFET Tool does not perfectly match to the SiC MOSFETs included into the tested module, obtained results are suitable to perform further simulations of power electronic converters.

   Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module
By Michele RICCIO [View]
[Download]

Abstract: In this contribution, a previously developed temperature-dependent SPICE model for SiC powerMOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its featuresare exploited for dynamic ET simulations of paralleled devices for multichip power module application.Finally, Monte Carlo ET simulations of paralleled devices during switching condition are used toevaluate the expected impact of statistical variation of device and circuit parameters on current sharingand on dissipated switching energy unbalance.

   Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies
By YOGESH SHARMA [View]
[Download]

Abstract: In this paper the electrical test results of 3.3kV Si-IGBT/4HSiC-Schottky hybrid substrates (Hybrid SiC substrates) and modules are presented. Comparison with 3.3kV Si-IGBT/Si-diode substrates (Si substrates) at 20oC (RT) and 125oC (HT) have shown that the losses in Hybrid SiC substrates/modules are miniscule as compared to Si devices. Finally the benefits of this technology are shown by building some hybrid 3.3kV, 1100 A modules.

   Comparison of IGBT and SiC MOSFET in resonant application
By Andreas MAERZ [View]
[Download]

Abstract: In this paper the main advantages of SiC MOSFETs compared to IGBTs in soft-switching converters are discussed. Experimental results show the difference in conduction losses between MOSFETs and IGBTs as well as switching losses under ZVC and ZCS condition on the basis of a high efficient DC-DC-converter design.

   Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter
By Diane-Perle SADIK [View]
[Download]

Abstract: Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A 'removable' stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.

   High temperature polyimide polymer material for high voltage IGBT power module switching applications
By Muhammad MORSHED [View]
[Download]

Abstract: This paper focuses on the prevention of partial discharge (PD) at the edge of the nickel coated Cu-ceramicinterface of 6.5 kV IGBT substrates due to high electric field effects. A high temperaturepolyimide has been used to enhance the PD capability. The addition of silane coupling agents to thepolyimide has improved the bond strength to metal and ceramic surfaces thereby enhancing thestructures PD resistance.

   How to protect SiC FETs from short circuit faults - overview
By Rais MIFTAKHUTDINOV [View]
[Download]

Abstract: SiC FETs significantly increase system efficiency and power density because of faster switching and lower ON resistance versus Si devices. However, SiC FETs behave differently at power system short circuit and overcurrent faults versus widely used in such applications IGBTs. Reliable protection of high voltage and high power systems is critical from safety and economic view. The paper reviews and analyzes SiC FETs overcurrent and short circuit detection and protection technique and provides recommendation for optimal approaches supported by experimental data.

   Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors
By Furkan KARAKAYA [View]
[Download]

Abstract: In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETsare investigated. An analytical model is developed to analyze the current-voltage characteristics of thedevice during switching transients both with and without the effects of parasitic components. In addition,the effect of the temperature and circuit parameters on the switching characteristics are investigated.

   Potentials and Boundaries of Discrete SiC-Transistors in AC Drives
By Henry BARTH [View]
[Download]

Abstract: SiC-transistors have lower switching losses than Si-IGBTs. This comes at a price. There are voltage spikes at the gate or basis and steep voltage rise across the transistor. Therefore, this work investigatesthe performance of SiC-MOSFETs, SiC-BJTs and Si-IGBTs in TO-247 housing and their drivers when used in an AC motor drive inverter, experimentally. A driver was designed to drive SiC bipolar junction transistors (SiC-BJT), SiC MOSFETs and Si-IGBTs likewise. With identical measurement set-up, double pulse tests were performed with each device type, in order to find the driver parameters for the lowest switching losses for buck converter operation. An all-SiC inverter was build, first with SiC-BJTs and later with SiC-MOSFETS. The low inverter losses, predicted by the double pulse tests, could not be obtained, though.

   Radiation and annealing effects of SiC MOSFETs at high voltage gate bias
By Jingwei ZHANG [View]
[Download]

Abstract: Radiation and annealing effects of SiC MOSFETs at high voltage gate bias are investigated. The oxidetrapped charges and interface traps are estimated. The results indicate that the shift of threshold voltage caused by the irradiation is reduced at positive 25V gate bias compared the shift at positive 12V gate bias. For the annealing,with the 45V gate bias, the oxide-trapped charges for irradiated SiC MOSFETsare neutralized more rapidly by high-voltage annealing than thermal annealing and the threshold voltagecan be recovered to its original level in a few minutes.

EPE 2018 - DS1b: New materials and Active Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 01: Devices, Packaging and System Integration > EPE 2018 - DS1b: New materials and Active Devices
	[return to parent folder]

	3.3 kV/450 A SiC MOSFET module - modelling and experiments By Jacek RABKOWSKI	[View] [Download]
Abstract: The paper presents simulation and experimental study focused on performance of a 3.3-kV/450-A SiC half-bridge MOSFET module. At first, series of tests were conducted with the use of single- and double-pulse procedures to determine dynamic parameters of the module. The turn-on process takes around 1,2µs and SiC MOSFETs dissipates 396 mJ when switching at 1800V/450A, while 130 mJ is dissipated during the turn-off process. Afterwards, a simulation model in Saber was developed on the base of manufacturer's preliminary data and adjusted in reference to results of experiments. Then, this model was applied to perform simulations of the module operating in a square-wave-controlled half-bridge inverter. Again, the simulation model was compared to the experimental model of the half-bridge with inductive load. However, the model developed in the Saber MOSFET Tool does not perfectly match to the SiC MOSFETs included into the tested module, obtained results are suitable to perform further simulations of power electronic converters.

	Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module By Michele RICCIO	[View] [Download]
Abstract: In this contribution, a previously developed temperature-dependent SPICE model for SiC powerMOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its featuresare exploited for dynamic ET simulations of paralleled devices for multichip power module application.Finally, Monte Carlo ET simulations of paralleled devices during switching condition are used toevaluate the expected impact of statistical variation of device and circuit parameters on current sharingand on dissipated switching energy unbalance.

	Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies By YOGESH SHARMA	[View] [Download]
Abstract: In this paper the electrical test results of 3.3kV Si-IGBT/4HSiC-Schottky hybrid substrates (Hybrid SiC substrates) and modules are presented. Comparison with 3.3kV Si-IGBT/Si-diode substrates (Si substrates) at 20oC (RT) and 125oC (HT) have shown that the losses in Hybrid SiC substrates/modules are miniscule as compared to Si devices. Finally the benefits of this technology are shown by building some hybrid 3.3kV, 1100 A modules.

	Comparison of IGBT and SiC MOSFET in resonant application By Andreas MAERZ	[View] [Download]
Abstract: In this paper the main advantages of SiC MOSFETs compared to IGBTs in soft-switching converters are discussed. Experimental results show the difference in conduction losses between MOSFETs and IGBTs as well as switching losses under ZVC and ZCS condition on the basis of a high efficient DC-DC-converter design.

	Effect of Parasitic Inductance in a Soft-Switching SiC Power Converter By Diane-Perle SADIK	[View] [Download]
Abstract: Wide Bandgap power semiconductors such as SiC MOSFETs, have enabled compact and highly efficient power converters operated at higher frequencies. However, parasitic inductance of the package may significantly increase power losses and limit the operation. This paper aims to quantify experimentally these losses in a soft-switching converter. A 'removable' stray inductance is implemented in a setup consisting of discrete SiC MOSFET units. Thus, the power loss of the transistors with and without stray inductance can be compared. Similarly slower switching speeds are also implemented to fully emulate a 62-mm module. The power loss induced by the package can thus be evaluated.

	High temperature polyimide polymer material for high voltage IGBT power module switching applications By Muhammad MORSHED	[View] [Download]
Abstract: This paper focuses on the prevention of partial discharge (PD) at the edge of the nickel coated Cu-ceramicinterface of 6.5 kV IGBT substrates due to high electric field effects. A high temperaturepolyimide has been used to enhance the PD capability. The addition of silane coupling agents to thepolyimide has improved the bond strength to metal and ceramic surfaces thereby enhancing thestructures PD resistance.

	How to protect SiC FETs from short circuit faults - overview By Rais MIFTAKHUTDINOV	[View] [Download]
Abstract: SiC FETs significantly increase system efficiency and power density because of faster switching and lower ON resistance versus Si devices. However, SiC FETs behave differently at power system short circuit and overcurrent faults versus widely used in such applications IGBTs. Reliable protection of high voltage and high power systems is critical from safety and economic view. The paper reviews and analyzes SiC FETs overcurrent and short circuit detection and protection technique and provides recommendation for optimal approaches supported by experimental data.

	Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors By Furkan KARAKAYA	[View] [Download]
Abstract: In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETsare investigated. An analytical model is developed to analyze the current-voltage characteristics of thedevice during switching transients both with and without the effects of parasitic components. In addition,the effect of the temperature and circuit parameters on the switching characteristics are investigated.

	Potentials and Boundaries of Discrete SiC-Transistors in AC Drives By Henry BARTH	[View] [Download]
Abstract: SiC-transistors have lower switching losses than Si-IGBTs. This comes at a price. There are voltage spikes at the gate or basis and steep voltage rise across the transistor. Therefore, this work investigatesthe performance of SiC-MOSFETs, SiC-BJTs and Si-IGBTs in TO-247 housing and their drivers when used in an AC motor drive inverter, experimentally. A driver was designed to drive SiC bipolar junction transistors (SiC-BJT), SiC MOSFETs and Si-IGBTs likewise. With identical measurement set-up, double pulse tests were performed with each device type, in order to find the driver parameters for the lowest switching losses for buck converter operation. An all-SiC inverter was build, first with SiC-BJTs and later with SiC-MOSFETS. The low inverter losses, predicted by the double pulse tests, could not be obtained, though.

	Radiation and annealing effects of SiC MOSFETs at high voltage gate bias By Jingwei ZHANG	[View] [Download]
Abstract: Radiation and annealing effects of SiC MOSFETs at high voltage gate bias are investigated. The oxidetrapped charges and interface traps are estimated. The results indicate that the shift of threshold voltage caused by the irradiation is reduced at positive 25V gate bias compared the shift at positive 12V gate bias. For the annealing,with the 45V gate bias, the oxide-trapped charges for irradiated SiC MOSFETsare neutralized more rapidly by high-voltage annealing than thermal annealing and the threshold voltagecan be recovered to its original level in a few minutes.