| Abstract |
In this contribution, a previously developed temperature-dependent SPICE model for SiC powerMOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its featuresare exploited for dynamic ET simulations of paralleled devices for multichip power module application.Finally, Monte Carlo ET simulations of paralleled devices during switching condition are used toevaluate the expected impact of statistical variation of device and circuit parameters on current sharingand on dissipated switching energy unbalance. |
