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Comparison of IGBT and SiC MOSFET in resonant application
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Author(s) |
Andreas MAERZ |
Abstract |
In this paper the main advantages of SiC MOSFETs compared to IGBTs in soft-switching converters are discussed. Experimental results show the difference in conduction losses between MOSFETs and IGBTs as well as switching losses under ZVC and ZCS condition on the basis of a high efficient DC-DC-converter design. |
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Filename: | 0037-epe2018-full-15355870.pdf |
Filesize: | 1.549 MB |
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Type |
Members Only |
Date |
Last modified 2019-05-05 by System |
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