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   Comparison of IGBT and SiC MOSFET in resonant application   [View] 
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 Author(s)   Andreas MAERZ 
 Abstract   In this paper the main advantages of SiC MOSFETs compared to IGBTs in soft-switching converters are discussed. Experimental results show the difference in conduction losses between MOSFETs and IGBTs as well as switching losses under ZVC and ZCS condition on the basis of a high efficient DC-DC-converter design. 
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Filename:0037-epe2018-full-15355870.pdf
Filesize:1.549 MB
 Type   Members Only 
 Date   Last modified 2019-05-05 by System