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Investigation of Turn-on and Turn-off Characteristics of Enhancement-Mode GaN Power Transistors
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| Author(s) |
Furkan KARAKAYA |
| Abstract |
In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETsare investigated. An analytical model is developed to analyze the current-voltage characteristics of thedevice during switching transients both with and without the effects of parasitic components. In addition,the effect of the temperature and circuit parameters on the switching characteristics are investigated. |
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| Filename: | 0250-epe2018-full-17312641.pdf |
| Filesize: | 1.047 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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