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Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies
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| Author(s) |
YOGESH SHARMA |
| Abstract |
In this paper the electrical test results of 3.3kV Si-IGBT/4HSiC-Schottky hybrid substrates (Hybrid SiC substrates) and modules are presented. Comparison with 3.3kV Si-IGBT/Si-diode substrates (Si substrates) at 20oC (RT) and 125oC (HT) have shown that the losses in Hybrid SiC substrates/modules are miniscule as compared to Si devices. Finally the benefits of this technology are shown by building some hybrid 3.3kV, 1100 A modules. |
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| Filename: | 0036-epe2018-full-16475258.pdf |
| Filesize: | 872.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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