| Abstract |
SiC-transistors have lower switching losses than Si-IGBTs. This comes at a price. There are voltage spikes at the gate or basis and steep voltage rise across the transistor. Therefore, this work investigatesthe performance of SiC-MOSFETs, SiC-BJTs and Si-IGBTs in TO-247 housing and their drivers when used in an AC motor drive inverter, experimentally. A driver was designed to drive SiC bipolar junction transistors (SiC-BJT), SiC MOSFETs and Si-IGBTs likewise. With identical measurement set-up, double pulse tests were performed with each device type, in order to find the driver parameters for the lowest switching losses for buck converter operation. An all-SiC inverter was build, first with SiC-BJTs and later with SiC-MOSFETS. The low inverter losses, predicted by the double pulse tests, could not be obtained, though. |
