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How to protect SiC FETs from short circuit faults - overview
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| Author(s) |
Rais MIFTAKHUTDINOV |
| Abstract |
SiC FETs significantly increase system efficiency and power density because of faster switching and lower ON resistance versus Si devices. However, SiC FETs behave differently at power system short circuit and overcurrent faults versus widely used in such applications IGBTs. Reliable protection of high voltage and high power systems is critical from safety and economic view. The paper reviews and analyzes SiC FETs overcurrent and short circuit detection and protection technique and provides recommendation for optimal approaches supported by experimental data. |
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| Filename: | 0448-epe2018-full-22373348.pdf |
| Filesize: | 773.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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