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Radiation and annealing effects of SiC MOSFETs at high voltage gate bias
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| Author(s) |
Jingwei ZHANG |
| Abstract |
Radiation and annealing effects of SiC MOSFETs at high voltage gate bias are investigated. The oxidetrapped charges and interface traps are estimated. The results indicate that the shift of threshold voltage caused by the irradiation is reduced at positive 25V gate bias compared the shift at positive 12V gate bias. For the annealing,with the 45V gate bias, the oxide-trapped charges for irradiated SiC MOSFETsare neutralized more rapidly by high-voltage annealing than thermal annealing and the threshold voltagecan be recovered to its original level in a few minutes. |
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| Filename: | 0087-epe2018-full-19265244.pdf |
| Filesize: | 192.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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