EPE Association: EPE 2017 - DS1a: Active Components

EPE 2017 - DS1a: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 01: Devices, Packaging and System Integration > EPE 2017 - DS1a: Active Components

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   3.3kV SiC Hybrid module with High Power next Core (HPnC) package
By Yusuke SEKINO [View]
[Download]

Abstract: Recently main requirements for power conversion system are further downsizing and higherefficiency. To satisfy these requirements, enhanced power density of power modules should be the keyto succeed. In this paper, 3.3kV SiC-Hybrid module with High Power next Core package, which canrealize enhanced power density, has been described.

   A Comprehensive Investigation of Dynamic Switching Performance for Press-pack IGBT Modules
By Yao CHANG [View]
[Download]

Abstract: Recently developed press-pack IGBT (PPI) modules, which feature higher voltage rating, larger thermal capacity, faster switching speed and easy utilization in series, have become a serious competitor with solder plastic IGBT modules in the field of voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission systems. To give a comprehensive investigation of press-pack IGBT modules, a platform to test dynamic switching performance for press-pack IGBT modules is designed and implemented by employing the principle of double-pulse test in this paper. The effects of external parameters--DC-link voltage, load current and junction temperature on dynamic performance of press-pack IGBT modules are characterized in detail, and their relative variation mechanism for switching performance of press-pack IGBT is confirmed with experimental results and analyzed from the view of semiconductor physics.

   A Novel Gate Driver Approach Using Inductive Feedback to Increase the Switching Speed of Power Semiconductor Devices
By Michael EBLI [View]
[Download]

Abstract: Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.Experimental results of the novel gate driver approach show a turn-on energy reduction of 78\% (from 80 µJ down to 17 µJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35\%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.

   An Investigation of the IGBT Gate Driving Conditions employing an Equivalent Circuit Model of Power Semiconductor Device
By Hirofumi UEMURA [View]
[Download]

Abstract: In this paper, an optimal gate driving condition between switching loss and surge voltage is investigated by circuit simulation technique. An equivalent circuit model of power semiconductor devices, such as an IGBT and a FWD, are employed. Chip level transient switching waveforms of IGBT at different gate driving condition are calculated and evaluated with measurement results. Evaluation result shows good agreement with measurements. Furthermore, module level switching performance is investigated based on the simulation model. The trade-off between switching losses and surge voltages respect to the gate resistance is analyzed and discussed.

   Analysis of Solid State Relay Solutions Based on Different Semiconductor Technologies
By Manuel FERNÁNDEZ [View]
[Download]

Abstract: This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT…) are presented. At this time, emerging Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) seem to be very suitable for the mentioned applications. Actually, GaN HEMTs based BDS has demonstrated to be the best solution to replace EMRs, with a high expectation to a significant cost reduction.

   Characteristics Improvement of 4H-SiC using the CIBH Structure for 10KV BA-JTE Diodes
By Peng LI [View]
[Download]

Abstract: The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional diode. In addition, the termination of BA-JTE guarantees the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics.

   Driving of a GaN Enhancement Mode HEMT Transistor with Zener Diode Protection for High Efficiency and Low EMI
By Ole Christian SPRO [View]
[Download]

Abstract: The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses and low EMC signature. Due to the very low gate capacitance of the GaN HEMT compared to the junction capacitance of the Zener diode, the addition of the Zener diode has an effect on the switching waveforms. The effects were investigated through simulation and measurements on a 1 kW PFC boost converter. The Zener diode was shown to increase time delay between the PWM signal and the switching of the GaN device. Furthermore, both fall and rise times of the drain-source voltage were influenced. Efficiency and EMC measurements highlight that the choice of gate resistor is an optimization problem, as faster switching increases efficiency but increase the EMC signature of the converter.

   Improvements of Switching Energy of SiC Transistor With Respect of Chip Integrity and EMC Standards
By Ignace RASOANARIVO [View]
[Download]

Abstract: This paper deals with the reductionof the switching energy losses of a SiC transistor by boosting its gate current. Notoriously, wide band-gap semiconductor transistors exhibit very fast switching performances, which provoke undesirables oscillations at high frequencies. An auxiliary circuit, located at the semiconductor device terminals, is developedto limit the electrical stresses, deleterious for the transistor integrity, and to reduce the EMC conducted interferenceswithout modifying the current and voltage slopes during the switching transition. Firstly, the SiC MosFET is characterized on SABER environment from MosFET template available on the library. The behavior of the obtained model is compared with Model Architect tool, available in the same environment. Experimental tests are carried out and confirm the behaviors predictedby simulation. The obtained results underlines the good accuracy and the merits of the simulation model developed in this work, despite the useof the power transistor in a complex configuration.

   Influence of Gate Structures and Electrical Boundary Conditions on Self Turn-On of HV IGBTs
By Patrick MUENSTER [View]
[Download]

Abstract: The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positivefeedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends onthe gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCADsimulations. Additionally, its influence during Fault under Load is investigated.

   Influence on Conduction Losses of Current-Direction Detection of the BIGT in the Three-Level Neutral-Point-Clamped Converter
By Sidney GIERSCHNER [View]
[Download]

Abstract: The Current-Direction Detection based on measurement of the load current can be used as static MOS-Control of the BIGT. As the gate-emitter voltage vGE affects the ON-state characteristics of the BIGT in diode forward-conduction mode, it has to be adapted for optimised operation. In order to operate at low static losses vGE has to be below threshold voltage in diode forward-conduction mode. The chosen switching thresholds of the hysteresis of the Current-Direction Detection has a tremendous influence on the conduction losses of the BIGT in diode forward-conduction mode. The effects are investigated for different load currents by varying the thresholds of the hysteresis as well as the hysteresis width using a NPC converter.

   MHz-Switching-Speed Current-Source Gate Driver for SiC Power MOSFETs
By Sho INAMORI [View]
[Download]

Abstract: We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs.The proposed gate driver uses an inductor as a current source during switching transient.Compared with a conventional gate driver, the proposed gate driver reduces switching time toff and ton by 20\% and 32\% respectively.

   Optimized Control Method for Reverse Conducting IGBTs
By Daniel LEXOW [View]
[Download]

Abstract: This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.

   Pulse thyristors adapted for synchronous switching-on in series connection during the commutation of current with high rate of rise
By Alexey SURMA [View]
[Download]

Abstract: The characteristics of pulse thyristors, which are viable for safe switching-on in series connection, are being discussed. The influence of turn-on delay distribution for thyristors in stack generated by overvoltages is being evaluated, including the «convergence» effect of turn-on delay distribution in series connection. There is shown suitability of new thyristor stacks for high current pulses commutation.

   Short-Circuit Behavior of the Three-Level Advanced-Active-Neutral-Point-Clamped Converter
By David HAMMES [View]
[Download]

Abstract: The Advanced-ANPC converter is designed to withstand almost every possible short-circuit failure of the semiconductors in comparison to state-of-the-art (A)NPC converters. The idea behind this concept is an additional short-circuit inductor to improve the robustness against faults. The presented investigations within this paper examine all the possible short-circuit situations and their effects for an (A)ANPC converter with high-voltage IGBTs.

   The Benefit of Using an IGBT With a High Desaturation Current
By Stefan HAIN [View]
[Download]

Abstract: Increasing the channel width of an IGBT is an obvious way to lower the Vce,sat value without any influences on the switching losses of the device. Consequently, the accessible benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be achieved, if the property of a low desaturation current is abandoned and the channel width is increased to a maximum.

   Turn-off Performance Optimization of Press-Pack IGBT with Advanced Active Gate Driver Technique
By Wuhua LI [View]
[Download]

Abstract: The press-pack IGBT (PPI) modules are characterized by design of double-sided cooling, solderless joint and wire-bondless contact. These features allow them to be utilized in the field where power density and reliability are demanding, especially in multi-MW wind turbine applications. However, owing to the press-pack structure, there is parasitic inductance which can't be neglected in the mechanical assembly with PPI modules. To diminish the voltage overshoot during turn-off transition caused by the parasitic inductance, an advanced active gate driver is put forward in this paper. The control diagram is given and the feasibility is evaluated. Eventually the performance between passive gate driver and proposed solution is compared experimentally.

EPE 2017 - DS1a: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 01: Devices, Packaging and System Integration > EPE 2017 - DS1a: Active Components
	[return to parent folder]

	3.3kV SiC Hybrid module with High Power next Core (HPnC) package By Yusuke SEKINO	[View] [Download]
Abstract: Recently main requirements for power conversion system are further downsizing and higherefficiency. To satisfy these requirements, enhanced power density of power modules should be the keyto succeed. In this paper, 3.3kV SiC-Hybrid module with High Power next Core package, which canrealize enhanced power density, has been described.

	A Comprehensive Investigation of Dynamic Switching Performance for Press-pack IGBT Modules By Yao CHANG	[View] [Download]
Abstract: Recently developed press-pack IGBT (PPI) modules, which feature higher voltage rating, larger thermal capacity, faster switching speed and easy utilization in series, have become a serious competitor with solder plastic IGBT modules in the field of voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission systems. To give a comprehensive investigation of press-pack IGBT modules, a platform to test dynamic switching performance for press-pack IGBT modules is designed and implemented by employing the principle of double-pulse test in this paper. The effects of external parameters--DC-link voltage, load current and junction temperature on dynamic performance of press-pack IGBT modules are characterized in detail, and their relative variation mechanism for switching performance of press-pack IGBT is confirmed with experimental results and analyzed from the view of semiconductor physics.

	A Novel Gate Driver Approach Using Inductive Feedback to Increase the Switching Speed of Power Semiconductor Devices By Michael EBLI	[View] [Download]
Abstract: Modern power semiconductor devices have low capacitances and can therefore achieve very fast switching transients under hard-switching conditions. However, these transients are often limited by parasitic elements, especially by the source inductance and the parasitic capacitances of the power semiconductor. These limitations cannot be compensated by conventional gate drivers. To overcome this, a novel gate driver approach for power semiconductors was developed. It uses a transformer which accelerates the switching by transferring energy from the source path to the gate path.Experimental results of the novel gate driver approach show a turn-on energy reduction of 78\% (from 80 µJ down to 17 µJ) with a drain-source voltage of 500V and a drain current of 60 A. Furthermore, the efficiency improvement is demonstrated for a hard-switching boost converter. For a switching frequency of 750 kHz with an input voltage of 230V and an output voltage of 400V, it was possible to extend the output power range by 35\%(from 2.3kW to 3.1 kW), due to the reduction of the turn-on losses, therefore lowering the junction temperature of the GaN-HEMT.

	An Investigation of the IGBT Gate Driving Conditions employing an Equivalent Circuit Model of Power Semiconductor Device By Hirofumi UEMURA	[View] [Download]
Abstract: In this paper, an optimal gate driving condition between switching loss and surge voltage is investigated by circuit simulation technique. An equivalent circuit model of power semiconductor devices, such as an IGBT and a FWD, are employed. Chip level transient switching waveforms of IGBT at different gate driving condition are calculated and evaluated with measurement results. Evaluation result shows good agreement with measurements. Furthermore, module level switching performance is investigated based on the simulation model. The trade-off between switching losses and surge voltages respect to the gate resistance is analyzed and discussed.

	Analysis of Solid State Relay Solutions Based on Different Semiconductor Technologies By Manuel FERNÁNDEZ	[View] [Download]
Abstract: This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT…) are presented. At this time, emerging Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) seem to be very suitable for the mentioned applications. Actually, GaN HEMTs based BDS has demonstrated to be the best solution to replace EMRs, with a high expectation to a significant cost reduction.

	Characteristics Improvement of 4H-SiC using the CIBH Structure for 10KV BA-JTE Diodes By Peng LI	[View] [Download]
Abstract: The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional diode. In addition, the termination of BA-JTE guarantees the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics.

	Driving of a GaN Enhancement Mode HEMT Transistor with Zener Diode Protection for High Efficiency and Low EMI By Ole Christian SPRO	[View] [Download]
Abstract: The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses and low EMC signature. Due to the very low gate capacitance of the GaN HEMT compared to the junction capacitance of the Zener diode, the addition of the Zener diode has an effect on the switching waveforms. The effects were investigated through simulation and measurements on a 1 kW PFC boost converter. The Zener diode was shown to increase time delay between the PWM signal and the switching of the GaN device. Furthermore, both fall and rise times of the drain-source voltage were influenced. Efficiency and EMC measurements highlight that the choice of gate resistor is an optimization problem, as faster switching increases efficiency but increase the EMC signature of the converter.

	Improvements of Switching Energy of SiC Transistor With Respect of Chip Integrity and EMC Standards By Ignace RASOANARIVO	[View] [Download]
Abstract: This paper deals with the reductionof the switching energy losses of a SiC transistor by boosting its gate current. Notoriously, wide band-gap semiconductor transistors exhibit very fast switching performances, which provoke undesirables oscillations at high frequencies. An auxiliary circuit, located at the semiconductor device terminals, is developedto limit the electrical stresses, deleterious for the transistor integrity, and to reduce the EMC conducted interferenceswithout modifying the current and voltage slopes during the switching transition. Firstly, the SiC MosFET is characterized on SABER environment from MosFET template available on the library. The behavior of the obtained model is compared with Model Architect tool, available in the same environment. Experimental tests are carried out and confirm the behaviors predictedby simulation. The obtained results underlines the good accuracy and the merits of the simulation model developed in this work, despite the useof the power transistor in a complex configuration.

	Influence of Gate Structures and Electrical Boundary Conditions on Self Turn-On of HV IGBTs By Patrick MUENSTER	[View] [Download]
Abstract: The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positivefeedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends onthe gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCADsimulations. Additionally, its influence during Fault under Load is investigated.

	Influence on Conduction Losses of Current-Direction Detection of the BIGT in the Three-Level Neutral-Point-Clamped Converter By Sidney GIERSCHNER	[View] [Download]
Abstract: The Current-Direction Detection based on measurement of the load current can be used as static MOS-Control of the BIGT. As the gate-emitter voltage vGE affects the ON-state characteristics of the BIGT in diode forward-conduction mode, it has to be adapted for optimised operation. In order to operate at low static losses vGE has to be below threshold voltage in diode forward-conduction mode. The chosen switching thresholds of the hysteresis of the Current-Direction Detection has a tremendous influence on the conduction losses of the BIGT in diode forward-conduction mode. The effects are investigated for different load currents by varying the thresholds of the hysteresis as well as the hysteresis width using a NPC converter.

	MHz-Switching-Speed Current-Source Gate Driver for SiC Power MOSFETs By Sho INAMORI	[View] [Download]
Abstract: We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs.The proposed gate driver uses an inductor as a current source during switching transient.Compared with a conventional gate driver, the proposed gate driver reduces switching time toff and ton by 20\% and 32\% respectively.

	Optimized Control Method for Reverse Conducting IGBTs By Daniel LEXOW	[View] [Download]
Abstract: This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.

	Pulse thyristors adapted for synchronous switching-on in series connection during the commutation of current with high rate of rise By Alexey SURMA	[View] [Download]
Abstract: The characteristics of pulse thyristors, which are viable for safe switching-on in series connection, are being discussed. The influence of turn-on delay distribution for thyristors in stack generated by overvoltages is being evaluated, including the «convergence» effect of turn-on delay distribution in series connection. There is shown suitability of new thyristor stacks for high current pulses commutation.

	Short-Circuit Behavior of the Three-Level Advanced-Active-Neutral-Point-Clamped Converter By David HAMMES	[View] [Download]
Abstract: The Advanced-ANPC converter is designed to withstand almost every possible short-circuit failure of the semiconductors in comparison to state-of-the-art (A)NPC converters. The idea behind this concept is an additional short-circuit inductor to improve the robustness against faults. The presented investigations within this paper examine all the possible short-circuit situations and their effects for an (A)ANPC converter with high-voltage IGBTs.

	The Benefit of Using an IGBT With a High Desaturation Current By Stefan HAIN	[View] [Download]
Abstract: Increasing the channel width of an IGBT is an obvious way to lower the Vce,sat value without any influences on the switching losses of the device. Consequently, the accessible benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be achieved, if the property of a low desaturation current is abandoned and the channel width is increased to a maximum.

	Turn-off Performance Optimization of Press-Pack IGBT with Advanced Active Gate Driver Technique By Wuhua LI	[View] [Download]
Abstract: The press-pack IGBT (PPI) modules are characterized by design of double-sided cooling, solderless joint and wire-bondless contact. These features allow them to be utilized in the field where power density and reliability are demanding, especially in multi-MW wind turbine applications. However, owing to the press-pack structure, there is parasitic inductance which can't be neglected in the mechanical assembly with PPI modules. To diminish the voltage overshoot during turn-off transition caused by the parasitic inductance, an advanced active gate driver is put forward in this paper. The control diagram is given and the feasibility is evaluated. Eventually the performance between passive gate driver and proposed solution is compared experimentally.