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Influence of Gate Structures and Electrical Boundary Conditions on Self Turn-On of HV IGBTs
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| Author(s) |
Patrick MUENSTER |
| Abstract |
The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positivefeedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends onthe gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCADsimulations. Additionally, its influence during Fault under Load is investigated. |
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| Filename: | 0401-epe2017-full-11541938.pdf |
| Filesize: | 772 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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