| Filename: | 0257-epe2017-full-21563582.pdf |
| Filesize: | 833.9 KB |
| The Benefit of Using an IGBT With a High Desaturation Current | ||||||
| Author(s) | Stefan HAIN | |||||
| Abstract | Increasing the channel width of an IGBT is an obvious way to lower the Vce,sat value without any influences on the switching losses of the device. Consequently, the accessible benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be achieved, if the property of a low desaturation current is abandoned and the channel width is increased to a maximum. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2018-04-17 by System | |||||
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