| Abstract |
The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional diode. In addition, the termination of BA-JTE guarantees the breakdown voltage of the diode. Simulated results indicate that the area ratio and doping concentration of the CIBH are the most important parameters for the optimization of switching characteristics. |
