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MHz-Switching-Speed Current-Source Gate Driver for SiC Power MOSFETs
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| Author(s) |
Sho INAMORI |
| Abstract |
We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs.The proposed gate driver uses an inductor as a current source during switching transient.Compared with a conventional gate driver, the proposed gate driver reduces switching time toff and ton by 20\% and 32\% respectively. |
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| Filename: | 0539-epe2017-full-13194718.pdf |
| Filesize: | 732.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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