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Influence on Conduction Losses of Current-Direction Detection of the BIGT in the Three-Level Neutral-Point-Clamped Converter
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| Author(s) |
Sidney GIERSCHNER |
| Abstract |
The Current-Direction Detection based on measurement of the load current can be used as static MOS-Control of the BIGT. As the gate-emitter voltage vGE affects the ON-state characteristics of the BIGT in diode forward-conduction mode, it has to be adapted for optimised operation. In order to operate at low static losses vGE has to be below threshold voltage in diode forward-conduction mode. The chosen switching thresholds of the hysteresis of the Current-Direction Detection has a tremendous influence on the conduction losses of the BIGT in diode forward-conduction mode. The effects are investigated for different load currents by varying the thresholds of the hysteresis as well as the hysteresis width using a NPC converter. |
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| Filename: | 0001-epe2017-full-14502604.pdf |
| Filesize: | 458.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-04-17 by System |
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