EPE Association: EPE 2003 - Topic 01i: Simulation and Modelling of Power Devices

EPE 2003 - Topic 01i: Simulation and Modelling of Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2003 - Conference > EPE 2003 - Topic 01: DEVICES > EPE 2003 - Topic 01i: Simulation and Modelling of Power Devices

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   Systematic procedure to map the validity range of insulated-gate device models
By B. Allard; H. Morel; W. Mi; G. Hatem; K. Ammous; D. Bergogne [View]
[Download]

Abstract: The paper presents original maps of model validity ranges. The validity range of an identified device model is rarely discussed in literature. Indeed the information is essential to let the engineer quantify the validity of a simulation. The fact is more and more important when a prototype-less design is required to design a power converter. Essentialy a validity map plots parameters versus operating conditions. Switching parameters are preferred to waveforms to quantify a device model validity range. A systematic procedure estimates the switching parameters from specific test-benches. The experimental setup is modeled and switching parameters are extracted similarly from simulated waveforms. Test-benches and associated procedures are detailed. The model parameter identification and validity maps are discussed for insulated-gate devices.

   Design procedure of silicon trench capacitors for power integration: Possible target value analysis
By A. Bajolet; J-C. Crebier; R. Zlatev; C. Schaeffer [View]
[Download]

Abstract: The paper presents the design procedure of silicon PN junction and SiO2 trench capacitors for power electronic integration purposes. For both capacitor types, the analytical design procedures are presented and results are compared to numerical simulations. Analysis is provided to present possible target values of capacitors and main characteristics per square mm (energy density, capacitor value and series impedance).

   Power components models with thermally dependent parameters for circuit simulator
By L. Mussard; P. Tounsi; P. Austin; G. Bonnet; J-M. Dorkel; J. Saiz [View]
[Download]

Abstract: In power electronics domain, the temperature shift is very important and can strongly affect the electrical characteristics. To develop realistic component models, we have to introduce the significant temperature effects. The study deals with the introduction of the physical parameters temperaturedependent formulas in a power components model. In this paper, an IGBT and PIN diode model are improved to give realistic static and dynamic electrical behaviour in a temperature range of -60°C to 125°C. Simulation results are compared to experimental ones provided by a thermal controlled high power test bench.

   Models of integrated magnetic components for simulation based design of SMPS with Simplorer
By H. Njiende; H. Wetzel; N. Froehleke; W. A. Cronje [View]
[Download]

Abstract: A modeling approach of integrated magnetic components is presented. Analytical and FEM modeling results are compared to experimental results. The model of the integrated magnetic component allows a simplified integration into simulation tools enabling pre-optimization before breadboarding. This is shown by simulation and measured results for a push pull converter with current doubler rectifier.

   Numerical investigating of the CoolMOS features
By Z. Lisik; J. Podgórski [View]
[Download]

Abstract: The essentially different rules concerning CoolMOS work in the conduction and blocking states, comparing to VDMOS, make worth of an additional investigating the phenomena in these states. Such a numerical investigation performed for CoolMOS structures has been made. It was aimed at finding why the blocking voltage of present CoolMOS devices is much lower than it was expected. The presented results answer this question.

   Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications
By A. Mihaila; F. Udrea; P. Godignon; G. Brezeanu; R. K. Malhan; A. Rusu; J. Millan; G. Amaratunga [View]
[Download]

Abstract: This paper is concerned with a comprehensive numerical study of serial power switches in a CASCODE configuration designed for 1.2kV voltage applications. In particular, we report for the first time a novel Si MOSFET/SiC JFET/SiC JFET cascode configuration. A fully integrated approach is also proposed as a solution for the SiC part of the hybrid multiple cascode. A complete fully integrated SiC approach is further presented. All SiC cascode-like power switches are proposed, namely the ACCUFET/JFET and MOSFET/JFET combinations. The new devices are numerically demonstrated and their transient behaviour investigated.

   Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
By M.L. Locatelli; K. Isoird; S. Dinculescu; V. Bley; T. Lebey; D. Planson; E. Dutarde; M. Mermet-Guyennet [View]
[Download]

Abstract: Due to more severe operating conditions (higher electric field, higher temperature,…), power electronics trends require to consider more accurately the dielectric environment of the semiconductor. The use of possible alternative semiconductors adds reason for such studies. Maximum electric field stress, relative dielectric permittivity and energy band gap properties, theoretically required for the SiC device passivation, are discussed. Advantages and drawbacks of high dielectric permittivity materials for passivation are emphasized. Then, a new 50 kV / 500°C experimental set-up allowing their precise characterization once the test-vehicles chosen, is presented in the paper.

   A new PSPICE electro-thermal subcircuit for power MOSFETs
By A. Laprade; S. Pearson; S. Benczkowski; G. Dolny; F. Wheatley [View]
[Download]

Abstract: An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global temperature definition.

   A new physics based SPICE subcircuit model for Insulated Gate Bipolar Transistors (IGBTs)
By R. Chibante; A. Araújo; A. Carvalho [View]
[Download]

Abstract: A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with posterior implementation using one-dimensional simplex finite elements. Other parts of the device are modeled using standard methods. Thus, this new hybrid model combines either advantages of numerical methods or mathematical, through modeling charge carrier behavior with high accuracy even maintaining low execution times. Implementation of the model in a general circuit simulator is made by means of an electrical analogy with the resulting system of ODEs.

   SPICE implementation of a FEM based model for bipolar power semiconductors
By A. Araújo; A. Carvalho [View]
[Download]

Abstract: This paper describes the methodology associated with the practical implementation, in SPICE circuit simulator, of a Finite Element Method (FEM) based model developed for Bipolar Power Semiconductor (BPS) simulation. The methodology is based on a modular approach that associates each zone of the semiconductor to a subcircuit implemented into SPICE simulator. Modeling a semiconductor is based on union of a set of subcircuit modules necessary for the different zones. Calculus of instantaneous distribution of lightly doped zones carriers (ambipolar diffusion equation (ADE) solution in space/time) is made of a group of subcircuit modules, analogue to FEM elements. The paper shows how each module is implemented and how easily elements with different sizes, topologies or physical properties are designed. Remaining semiconductor zones (highly doped emitters narrow base and MOS zones) are modeled with subcircuits using classical approaches. Voltage drops are modeled with subcircuits implementing a Boltzmann approach for junctions and a Poisson approach for depletion zones. Description for obtaining each associated SPICE subcircuit is presented. Global solution is approached by serial interconnection of these modules (each one directly related to one element of the domain). The paper concludes with simulation results showing hole/electron distribution, in time/space, in low-doped zones of PIN Diodes, BJTs and IGBTs, as well as, corresponding dynamic commutation waveforms for current and voltage.

   Optimization of high-voltage IGBT modules turn-on on inductive load
By R. Manzo; G. Busatto; L. Fratelli; G. Giannini; R. Nisci; C. Abbate [View]
[Download]

Abstract: A new driving strategy for 3300V-1200A IGBT modules is presented. It improves the IGBT turn-on on inductive load in terms of power dissipation, respecting diode reverse recovery constraint and without complicating too much driver design. It is based on a suitable construction of collector current waveform, whose optimized form is obtained by a proper control of the gate resistance during switching operations. Such method allows us to obtain easily an up to 24% reduction of energy dissipation compared with the conventional resistivecapacitive driver, without any relevant hardware addiction.

EPE 2003 - Topic 01i: Simulation and Modelling of Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2003 - Conference > EPE 2003 - Topic 01: DEVICES > EPE 2003 - Topic 01i: Simulation and Modelling of Power Devices
	[return to parent folder]

	Systematic procedure to map the validity range of insulated-gate device models By B. Allard; H. Morel; W. Mi; G. Hatem; K. Ammous; D. Bergogne	[View] [Download]
Abstract: The paper presents original maps of model validity ranges. The validity range of an identified device model is rarely discussed in literature. Indeed the information is essential to let the engineer quantify the validity of a simulation. The fact is more and more important when a prototype-less design is required to design a power converter. Essentialy a validity map plots parameters versus operating conditions. Switching parameters are preferred to waveforms to quantify a device model validity range. A systematic procedure estimates the switching parameters from specific test-benches. The experimental setup is modeled and switching parameters are extracted similarly from simulated waveforms. Test-benches and associated procedures are detailed. The model parameter identification and validity maps are discussed for insulated-gate devices.

	Design procedure of silicon trench capacitors for power integration: Possible target value analysis By A. Bajolet; J-C. Crebier; R. Zlatev; C. Schaeffer	[View] [Download]
Abstract: The paper presents the design procedure of silicon PN junction and SiO2 trench capacitors for power electronic integration purposes. For both capacitor types, the analytical design procedures are presented and results are compared to numerical simulations. Analysis is provided to present possible target values of capacitors and main characteristics per square mm (energy density, capacitor value and series impedance).

	Power components models with thermally dependent parameters for circuit simulator By L. Mussard; P. Tounsi; P. Austin; G. Bonnet; J-M. Dorkel; J. Saiz	[View] [Download]
Abstract: In power electronics domain, the temperature shift is very important and can strongly affect the electrical characteristics. To develop realistic component models, we have to introduce the significant temperature effects. The study deals with the introduction of the physical parameters temperaturedependent formulas in a power components model. In this paper, an IGBT and PIN diode model are improved to give realistic static and dynamic electrical behaviour in a temperature range of -60°C to 125°C. Simulation results are compared to experimental ones provided by a thermal controlled high power test bench.

	Models of integrated magnetic components for simulation based design of SMPS with Simplorer By H. Njiende; H. Wetzel; N. Froehleke; W. A. Cronje	[View] [Download]
Abstract: A modeling approach of integrated magnetic components is presented. Analytical and FEM modeling results are compared to experimental results. The model of the integrated magnetic component allows a simplified integration into simulation tools enabling pre-optimization before breadboarding. This is shown by simulation and measured results for a push pull converter with current doubler rectifier.

	Numerical investigating of the CoolMOS features By Z. Lisik; J. Podgórski	[View] [Download]
Abstract: The essentially different rules concerning CoolMOS work in the conduction and blocking states, comparing to VDMOS, make worth of an additional investigating the phenomena in these states. Such a numerical investigation performed for CoolMOS structures has been made. It was aimed at finding why the blocking voltage of present CoolMOS devices is much lower than it was expected. The presented results answer this question.

	Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications By A. Mihaila; F. Udrea; P. Godignon; G. Brezeanu; R. K. Malhan; A. Rusu; J. Millan; G. Amaratunga	[View] [Download]
Abstract: This paper is concerned with a comprehensive numerical study of serial power switches in a CASCODE configuration designed for 1.2kV voltage applications. In particular, we report for the first time a novel Si MOSFET/SiC JFET/SiC JFET cascode configuration. A fully integrated approach is also proposed as a solution for the SiC part of the hybrid multiple cascode. A complete fully integrated SiC approach is further presented. All SiC cascode-like power switches are proposed, namely the ACCUFET/JFET and MOSFET/JFET combinations. The new devices are numerically demonstrated and their transient behaviour investigated.

	Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment By M.L. Locatelli; K. Isoird; S. Dinculescu; V. Bley; T. Lebey; D. Planson; E. Dutarde; M. Mermet-Guyennet	[View] [Download]
Abstract: Due to more severe operating conditions (higher electric field, higher temperature,…), power electronics trends require to consider more accurately the dielectric environment of the semiconductor. The use of possible alternative semiconductors adds reason for such studies. Maximum electric field stress, relative dielectric permittivity and energy band gap properties, theoretically required for the SiC device passivation, are discussed. Advantages and drawbacks of high dielectric permittivity materials for passivation are emphasized. Then, a new 50 kV / 500°C experimental set-up allowing their precise characterization once the test-vehicles chosen, is presented in the paper.

	A new PSPICE electro-thermal subcircuit for power MOSFETs By A. Laprade; S. Pearson; S. Benczkowski; G. Dolny; F. Wheatley	[View] [Download]
Abstract: An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global temperature definition.

	A new physics based SPICE subcircuit model for Insulated Gate Bipolar Transistors (IGBTs) By R. Chibante; A. Araújo; A. Carvalho	[View] [Download]
Abstract: A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with posterior implementation using one-dimensional simplex finite elements. Other parts of the device are modeled using standard methods. Thus, this new hybrid model combines either advantages of numerical methods or mathematical, through modeling charge carrier behavior with high accuracy even maintaining low execution times. Implementation of the model in a general circuit simulator is made by means of an electrical analogy with the resulting system of ODEs.

	SPICE implementation of a FEM based model for bipolar power semiconductors By A. Araújo; A. Carvalho	[View] [Download]
Abstract: This paper describes the methodology associated with the practical implementation, in SPICE circuit simulator, of a Finite Element Method (FEM) based model developed for Bipolar Power Semiconductor (BPS) simulation. The methodology is based on a modular approach that associates each zone of the semiconductor to a subcircuit implemented into SPICE simulator. Modeling a semiconductor is based on union of a set of subcircuit modules necessary for the different zones. Calculus of instantaneous distribution of lightly doped zones carriers (ambipolar diffusion equation (ADE) solution in space/time) is made of a group of subcircuit modules, analogue to FEM elements. The paper shows how each module is implemented and how easily elements with different sizes, topologies or physical properties are designed. Remaining semiconductor zones (highly doped emitters narrow base and MOS zones) are modeled with subcircuits using classical approaches. Voltage drops are modeled with subcircuits implementing a Boltzmann approach for junctions and a Poisson approach for depletion zones. Description for obtaining each associated SPICE subcircuit is presented. Global solution is approached by serial interconnection of these modules (each one directly related to one element of the domain). The paper concludes with simulation results showing hole/electron distribution, in time/space, in low-doped zones of PIN Diodes, BJTs and IGBTs, as well as, corresponding dynamic commutation waveforms for current and voltage.

	Optimization of high-voltage IGBT modules turn-on on inductive load By R. Manzo; G. Busatto; L. Fratelli; G. Giannini; R. Nisci; C. Abbate	[View] [Download]
Abstract: A new driving strategy for 3300V-1200A IGBT modules is presented. It improves the IGBT turn-on on inductive load in terms of power dissipation, respecting diode reverse recovery constraint and without complicating too much driver design. It is based on a suitable construction of collector current waveform, whose optimized form is obtained by a proper control of the gate resistance during switching operations. Such method allows us to obtain easily an up to 24% reduction of energy dissipation compared with the conventional resistivecapacitive driver, without any relevant hardware addiction.