| Abstract |
Due to more severe operating conditions (higher electric field, higher temperature,…), power
electronics trends require to consider more accurately the dielectric environment of the semiconductor.
The use of possible alternative semiconductors adds reason for such studies. Maximum electric field
stress, relative dielectric permittivity and energy band gap properties, theoretically required for the SiC
device passivation, are discussed. Advantages and drawbacks of high dielectric permittivity materials
for passivation are emphasized. Then, a new 50 kV / 500°C experimental set-up allowing their precise
characterization once the test-vehicles chosen, is presented in the paper. |
