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Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications
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| Author(s) |
A. Mihaila; F. Udrea; P. Godignon; G. Brezeanu; R. K. Malhan; A. Rusu; J. Millan; G. Amaratunga |
| Abstract |
This paper is concerned with a comprehensive numerical study of serial power switches in a CASCODE configuration designed for 1.2kV voltage applications. In particular, we report for the first time a novel Si MOSFET/SiC JFET/SiC JFET cascode configuration. A fully integrated approach is also proposed as a solution for the SiC part of the hybrid multiple cascode. A complete fully integrated SiC approach is further presented. All SiC cascode-like power switches are proposed, namely the ACCUFET/JFET and MOSFET/JFET combinations. The new devices are numerically demonstrated and their transient behaviour investigated. |
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| Filename: | EPE2003-PP0839 - Mihaila |
| Filesize: | 445 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-14 by Unknown |
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