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Design procedure of silicon trench capacitors for power integration: Possible target value analysis
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| Author(s) |
A. Bajolet; J-C. Crebier; R. Zlatev; C. Schaeffer |
| Abstract |
The paper presents the design procedure of silicon PN junction and SiO2 trench capacitors
for power electronic integration purposes. For both capacitor types, the analytical design procedures
are presented and results are compared to numerical simulations. Analysis is provided to present
possible target values of capacitors and main characteristics per square mm (energy density, capacitor
value and series impedance). |
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| Filename: | EPE2003-PP0553 - Bajolet |
| Filesize: | 737.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-14 by Unknown |
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