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   A new PSPICE electro-thermal subcircuit for power MOSFETs   [View] 
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 Author(s)   A. Laprade; S. Pearson; S. Benczkowski; G. Dolny; F. Wheatley 
 Abstract   An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE’s global temperature definition. 
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Filename:EPE2003-PP0923 - Laprade
Filesize:333.2 KB
 Type   Members Only 
 Date   Last modified 2003-10-14 by Unknown