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A new PSPICE electro-thermal subcircuit for power MOSFETs
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Author(s) |
A. Laprade; S. Pearson; S. Benczkowski; G. Dolny; F. Wheatley |
Abstract |
An empirical self-heating SPICE MOSFET model which accurately portrays the vertical
DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation
is the culmination of years of evolution in MOSFET modeling. This new version brings together
the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model
[2,3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure
using parametric data is described. Simulation response of the new self-heating MOSFET
model track the dynamic thermal response and is independent of SPICE’s global temperature definition. |
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Filename: | EPE2003-PP0923 - Laprade |
Filesize: | 333.2 KB |
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Type |
Members Only |
Date |
Last modified 2003-10-14 by Unknown |
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