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Optimization of high-voltage IGBT modules turn-on on inductive load
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Author(s) |
R. Manzo; G. Busatto; L. Fratelli; G. Giannini; R. Nisci; C. Abbate |
Abstract |
A new driving strategy for 3300V-1200A IGBT modules is presented. It
improves the IGBT turn-on on inductive load in terms of power dissipation,
respecting diode reverse recovery constraint and without complicating too much
driver design.
It is based on a suitable construction of collector current waveform, whose
optimized form is obtained by a proper control of the gate resistance during
switching operations. Such method allows us to obtain easily an up to 24%
reduction of energy dissipation compared with the conventional resistivecapacitive
driver, without any relevant hardware addiction. |
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Filename: | EPE2003-PP1174 - Manzo |
Filesize: | 426.2 KB |
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Type |
Members Only |
Date |
Last modified 2003-10-14 by Unknown |
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