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   Optimization of high-voltage IGBT modules turn-on on inductive load   [View] 
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 Author(s)   R. Manzo; G. Busatto; L. Fratelli; G. Giannini; R. Nisci; C. Abbate 
 Abstract   A new driving strategy for 3300V-1200A IGBT modules is presented. It improves the IGBT turn-on on inductive load in terms of power dissipation, respecting diode reverse recovery constraint and without complicating too much driver design. It is based on a suitable construction of collector current waveform, whose optimized form is obtained by a proper control of the gate resistance during switching operations. Such method allows us to obtain easily an up to 24% reduction of energy dissipation compared with the conventional resistivecapacitive driver, without any relevant hardware addiction. 
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Filename:EPE2003-PP1174 - Manzo
Filesize:426.2 KB
 Type   Members Only 
 Date   Last modified 2003-10-14 by Unknown