EPE Association: EPE 2003 - Topic 01b: Power Semiconductor Devices

EPE 2003 - Topic 01b: Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2003 - Conference > EPE 2003 - Topic 01: DEVICES > EPE 2003 - Topic 01b: Power Semiconductor Devices

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   Study of a buck synchronous rectifier using an empirical mosfet model
By J.-M. Boggetto; J.-P. Ferrieux; Y. Lembeye; G. Verneau [View]
[Download]

Abstract: A study of a buck synchronous rectifier is presented, detailing advantages and drawbacks, and stressing on understanding MOSFET dynamic behaviour. An empirical MOSFET model, based on physical analysis, is presented. Implanted in PSPICE and MATLAB, it agrees with synchronous rectifier experimental results, and will interest component manufacturers and circuit designers.

   Emergency operating states of a switch-mode DC converter with intelligent power module
By M. Tondos; M. Olêcki [View]
[Download]

Abstract: The article presents results of laboratory investigation of a switch-mode DC converter with Intelligent Power Module (IPM) for two different short-circuit cases: Case 1: Switching-on an IGBT into a short-circuit, Case 2: Load or ground fault short-circuit across a switched-on IGBT. Safe Operation Area (SOA) in the short-circuit cases has been described and the waveforms of the collector current and collector-emitter voltage of IGBT transistor for each case of short-circuit are shown in the included figures.

   Introduction of a new optimized low voltage MOSFET for notebook converter appl. in order to maximize the efficiency and to diminish the semiconductor content
By J. Ejury [View]
[Download]

Abstract: The subject of this paper is a new generation of optimized MOSFET . To evaluate its performance, the step-down converter topology for a notebook DC/DC core supply was investigated. As well as a description of the approach, the benefits for converter applications are shown by measurements and simulation results.

   Design and characteristics of 10 kV IGCTs
By S. Bernet; E. Caroll; P. Streit; O. Apeldoorn; P. Steimer; S. Tschirley [View]
[Download]

Abstract: This paper describes the requirements, the design and the characteristics of 10 kV IGCTs for 6 kV- 7.2 kV three-level - neutral point clamped voltage source converters. Considerations of the converter and device design as well as measurements of 10 kV IGCTs are the basis for a description of blocking, on-state and switching characteristics which enable an attractive design of Medium Voltage Converters.

   Recent achievements and approaches for further optimization of high current low voltage power semiconductor components
By A. Lindemann [View]
[Download]

Abstract: Achievable current density of low voltage power MOSFET components has increased significantly over the past years. Those devices are mainly used in converters for automotive auxiliary drives or renewable energy. The paper outlines state of the art technology and gives an outlook on further development. taking into account the particular requirements of the aforementioned demanding applications.

   Measurement of multiple chip currents in a press-pack IGBT using Rogowski coils
By B. Bock; E. U. Krafft; A. Steimel

Abstract: The currents of single chips parralleled inside a 4.5kV / 2kA press-pack IGBT are measured with Rogowski coils to investigate the static and dynamic distribution of the total current inside the device. Because of the low magnitude of the signals, an especially careful calibration and measurement strategy is needed. The measurements reveal static and dynamic inhomogeneities as well as significant current redistributions during turn-off.

   Current limitation with SiC devices
By D. Tournier; P. Godignon; D. Planson; F. Nallet; J. Millan; F. Sarrus; J.F. de Palma [View]
[Download]

Abstract: This paper reports the different solutions we have studied to integrate current limiters with SiC-based devices. Current limiters are highly needed for serial protection in almost the full range of power applications, from telecommunication market to traction and energy distribution. Two types of structures are presented, with two and three terminals, respectively. The two terminal device is based on an ACCUMOSFET structure optimised for current limiting application. The three terminal device is a special JFET design for efficient current pinch-off. Both structures have been optimised using numerical simulations and then fabricated, characterized and checked in a real circuit. The current limiting capability has been demonstrated and the superior potential of SiC is experimentally demonstrated.

   Applications of heat pipe cooling systems in high power semiconductor converters
By S. Januszewski; Z. Zakrzewski; K. Zymmer [View]
[Download]

Abstract: The paper presents a very efficient heat pipe cooling system mainly used for semiconductor converters that should have limited volume or must work in aggressive environment. The heavy high power electrotraction locomotives are examples of such conditions. Some design solutions and test results are given. Comparison of different cooling system for power electronic equipment is discussed with power loss level and limited volume conditions taken into account.

   Low-voltage MOSFETs with improved performances in advanced DC-DC converter applications
By S. Musumeci; R. Pagano; A. Raciti; G. Belverde; C. Guastella; M. Melito [View]
[Download]

Abstract: The paper deals with the performance determination of a low-voltage power MOSFET in high-current converter applications, such as voltage regulator modules (VRMs). The device technology is based on a strip geometry layout that allows a better trade-off between the on-resistance and the gate charge. First of all, the main characteristics of the new family of MOSFETs are presented and discussed, and a short description of the main advantages of the new technology is given, focusing on the innovations. The switching performances are evaluated looking for the user point of view. Moreover, a detailed experimental investigation of the proposed MOSFET in an actual DC-DC converter application (VRM) has been carried out. In particular the efficiency of the converter has been evaluated in order to better understand the improvement obtainable by using the new generation of high-current, low-voltage MOSFET.

   Power MOSFET failures in short circuit conditions in a series generator for induction heating
By J. Jordán; E. J. Dede; V. Esteve; C. Cases [View]
[Download]

Abstract: Series generator is basically a voltage-fed inverter with a load formed by L-C series (L is the induction heating coil). Voltage-fed MOSFET inverters are structures for high frequency induction heating applications. In practical working conditions, short-circuit of the coil can damage the MOSFET of the inverter if no special precautions are taken. This communication tries to determine which reasons originate the failures of power MOSFET in a series generator. The failures take place only in case of short circuit of heating coil. We explain how the inverter works and the short circuit process. We reproduce switching conditions in laboratory for study the switching behaviour of internal body diode of MOSFET. We measure experimental failures of internal MOSFET body diode in short circuit conditions.

   Comparison of wide bandgap semiconductors for power applications
By B. Ozpineci; L. M. Tolbert; S. Kamrul Islam; M. Chinthavali [View]
[Download]

Abstract: Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices can not handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide band gap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond with their superior electrical properties are likely candidates to replace Si in the near future. This paper compares all the aforementioned wide bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

   Transit time oscillations as a source of EMC problems in bipolar power devices
By R. Siemieniec; J. Lutz; M. Netzel; P. Mourick [View]
[Download]

Abstract: Transit time oscillations may occur in the turn-off phase of power devices and cause high-frequency oscillations. This paper investigates two mechanisms which lead to these oscillations: dynamic impact ionization transit time (IMPATT) oscillations and plasma extraction transit time (PETT) oscillations. Both lead to a deterioration of the EMC behavior and consequently they should be avoided.

   5th generation intelligent power module with CSTBT chip and new control circuit and new package
By T. Igarashi; T. Inoue; G. Majumdar; E. Thal [View]
[Download]

Abstract: Energy saving is the most essential feature of any present-day power electronics equipment. Power devices have made remarkable contribution in this aspect since the starting days of their use in power electronics equipment through continuous improvement. Recently, EMI reduction has become one of the most important items in power conversion equipment design, besides the energy saving issue. Because of this trend, the new generation of power components would have to satisfy the contradictory needs of reducing power loss and slow switching speed at the same time. To answer such market needs, we developed the 5th generation Intelligent Power Module (IPM) series by optimally integrating the latest 5th generation IGBT chip technology and a new control circuit topology in a compact housing. This paper provides details of the series’ design features and performances.

   Switching internal dynamics of trench IGBT in ZCS single ended resonant converters
By K. Shrestha; D.I.M. de Silva; F. Udrea; G.A.J. Amaratunga; P.R. Palmer [View]
[Download]

Abstract: The Trench IGBT offers advantages over the DMOS IGBT in conventional switching applications. This paper compares the internal dynamic behaviour of the devices in a ZCS single-ended resonant inverter, using 2D numerical simulations and experimental results. Charge removal through the channel during the zero current phase is shown to be an important mechanism governing the magnitude and extent of the forward recovery current during ZCS turn-off. Conclusions are drawn and the improved understanding of internal carrier dynamics will lead to better utilization of Trench IGBT in ZCS single ended resonant converters.

   New generation of vertical MOSFETs for future 12 volts / 42 volts dual batteries in automotive applications
By S. Alves; F. Morancho; J-M. Reynès; B. Lopes [View]
[Download]

Abstract: In this paper, a new Vertical N-channel FLIMOSFET dedicated to automotive applications (below 100 Volts) is proposed for the first time: compared to Superjunction devices, this device is relatively simple because only one P Floating Island is introduced in the N- epitaxial region. The “specific onresistance / breakdown voltage” trade-off has been theoretically studied (2D and 3D simulations): it is shown that, even in low voltage applications, the FLIMOSFET exhibits better performance than the conventional VDMOSFET (for instance 30 % improvement of the specific on-resistance for the same breakdown voltage — 85 Volts —) and overcomes the conventional “silicon limit”. This is due to the strong reduction of access (Ra.S) and drift (Rd.S) resistances, because of the increase of the N- epitaxial layer doping concentration in the FLIMOSFET. In other words, in term of “specific on-resistance / breakdown voltage” trade-off, the FLIMOSFET appears to be one of the best MOS device in low voltage applications.

   Integrated voltage sensor for IGBTs protection in short-circuit mode
By C. Caramel; P. Austin; J-L. Sanchez; G. Bonnet; M. Breil; E. Imbernon; J. Jalade; J-P. Laur; O. Causse [View]
[Download]

Abstract: Generally, short-circuit protections for isolated gated power switch are provided using a current sensing method with the assistance of analogical discrete devices. In this paper, a new integrated structure allowing detection and protection against short-circuit is proposed. The operating mode of this circuit is based on power device’s anode voltage detection. This voltage detection is made possible by a new integrated sensor called “Anode voltage sensor”. The full circuit is built around the monolithic association of elementary cells like delay-MOS (Md), delay-resistor, and a MOS allowing the IGBT switch-off (Mc). This full circuit can be integrated in the heart of the power switch using Functional Integration mode. The power switch used as test vehicle for 2D simulations of full detection and protection circuit is the IGBT. The anode voltage sensor device has been realized, and first experimental results are presented.

   Fuse and relay replacement by intelligent 2mO RDSON smart power switches
By P. Turpin; L. Guillot; M. Cousineau; P. Dupuy; P. Perruchoud [View]
[Download]

Abstract: This paper presents an intelligent ultra low RDSON power switch replacing electromechanical relays in a variety of embedded systems. We will explain how PowerQFN package with multi-chip allows to reduce board space, reach RDSON of 2mW and brings lots of smart feature to increase system reliability. We will also present an innovative over-current strategy which allows to suppress fuses and reduce wire harness bringing a significant cost saving on system.

EPE 2003 - Topic 01b: Power Semiconductor Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2003 - Conference > EPE 2003 - Topic 01: DEVICES > EPE 2003 - Topic 01b: Power Semiconductor Devices
	[return to parent folder]

	Study of a buck synchronous rectifier using an empirical mosfet model By J.-M. Boggetto; J.-P. Ferrieux; Y. Lembeye; G. Verneau	[View] [Download]
Abstract: A study of a buck synchronous rectifier is presented, detailing advantages and drawbacks, and stressing on understanding MOSFET dynamic behaviour. An empirical MOSFET model, based on physical analysis, is presented. Implanted in PSPICE and MATLAB, it agrees with synchronous rectifier experimental results, and will interest component manufacturers and circuit designers.

	Emergency operating states of a switch-mode DC converter with intelligent power module By M. Tondos; M. Olêcki	[View] [Download]
Abstract: The article presents results of laboratory investigation of a switch-mode DC converter with Intelligent Power Module (IPM) for two different short-circuit cases: Case 1: Switching-on an IGBT into a short-circuit, Case 2: Load or ground fault short-circuit across a switched-on IGBT. Safe Operation Area (SOA) in the short-circuit cases has been described and the waveforms of the collector current and collector-emitter voltage of IGBT transistor for each case of short-circuit are shown in the included figures.

	Introduction of a new optimized low voltage MOSFET for notebook converter appl. in order to maximize the efficiency and to diminish the semiconductor content By J. Ejury	[View] [Download]
Abstract: The subject of this paper is a new generation of optimized MOSFET . To evaluate its performance, the step-down converter topology for a notebook DC/DC core supply was investigated. As well as a description of the approach, the benefits for converter applications are shown by measurements and simulation results.

	Design and characteristics of 10 kV IGCTs By S. Bernet; E. Caroll; P. Streit; O. Apeldoorn; P. Steimer; S. Tschirley	[View] [Download]
Abstract: This paper describes the requirements, the design and the characteristics of 10 kV IGCTs for 6 kV- 7.2 kV three-level - neutral point clamped voltage source converters. Considerations of the converter and device design as well as measurements of 10 kV IGCTs are the basis for a description of blocking, on-state and switching characteristics which enable an attractive design of Medium Voltage Converters.

	Recent achievements and approaches for further optimization of high current low voltage power semiconductor components By A. Lindemann	[View] [Download]
Abstract: Achievable current density of low voltage power MOSFET components has increased significantly over the past years. Those devices are mainly used in converters for automotive auxiliary drives or renewable energy. The paper outlines state of the art technology and gives an outlook on further development. taking into account the particular requirements of the aforementioned demanding applications.

	Measurement of multiple chip currents in a press-pack IGBT using Rogowski coils By B. Bock; E. U. Krafft; A. Steimel
Abstract: The currents of single chips parralleled inside a 4.5kV / 2kA press-pack IGBT are measured with Rogowski coils to investigate the static and dynamic distribution of the total current inside the device. Because of the low magnitude of the signals, an especially careful calibration and measurement strategy is needed. The measurements reveal static and dynamic inhomogeneities as well as significant current redistributions during turn-off.

	Current limitation with SiC devices By D. Tournier; P. Godignon; D. Planson; F. Nallet; J. Millan; F. Sarrus; J.F. de Palma	[View] [Download]
Abstract: This paper reports the different solutions we have studied to integrate current limiters with SiC-based devices. Current limiters are highly needed for serial protection in almost the full range of power applications, from telecommunication market to traction and energy distribution. Two types of structures are presented, with two and three terminals, respectively. The two terminal device is based on an ACCUMOSFET structure optimised for current limiting application. The three terminal device is a special JFET design for efficient current pinch-off. Both structures have been optimised using numerical simulations and then fabricated, characterized and checked in a real circuit. The current limiting capability has been demonstrated and the superior potential of SiC is experimentally demonstrated.

	Applications of heat pipe cooling systems in high power semiconductor converters By S. Januszewski; Z. Zakrzewski; K. Zymmer	[View] [Download]
Abstract: The paper presents a very efficient heat pipe cooling system mainly used for semiconductor converters that should have limited volume or must work in aggressive environment. The heavy high power electrotraction locomotives are examples of such conditions. Some design solutions and test results are given. Comparison of different cooling system for power electronic equipment is discussed with power loss level and limited volume conditions taken into account.

	Low-voltage MOSFETs with improved performances in advanced DC-DC converter applications By S. Musumeci; R. Pagano; A. Raciti; G. Belverde; C. Guastella; M. Melito	[View] [Download]
Abstract: The paper deals with the performance determination of a low-voltage power MOSFET in high-current converter applications, such as voltage regulator modules (VRMs). The device technology is based on a strip geometry layout that allows a better trade-off between the on-resistance and the gate charge. First of all, the main characteristics of the new family of MOSFETs are presented and discussed, and a short description of the main advantages of the new technology is given, focusing on the innovations. The switching performances are evaluated looking for the user point of view. Moreover, a detailed experimental investigation of the proposed MOSFET in an actual DC-DC converter application (VRM) has been carried out. In particular the efficiency of the converter has been evaluated in order to better understand the improvement obtainable by using the new generation of high-current, low-voltage MOSFET.

	Power MOSFET failures in short circuit conditions in a series generator for induction heating By J. Jordán; E. J. Dede; V. Esteve; C. Cases	[View] [Download]
Abstract: Series generator is basically a voltage-fed inverter with a load formed by L-C series (L is the induction heating coil). Voltage-fed MOSFET inverters are structures for high frequency induction heating applications. In practical working conditions, short-circuit of the coil can damage the MOSFET of the inverter if no special precautions are taken. This communication tries to determine which reasons originate the failures of power MOSFET in a series generator. The failures take place only in case of short circuit of heating coil. We explain how the inverter works and the short circuit process. We reproduce switching conditions in laboratory for study the switching behaviour of internal body diode of MOSFET. We measure experimental failures of internal MOSFET body diode in short circuit conditions.

	Comparison of wide bandgap semiconductors for power applications By B. Ozpineci; L. M. Tolbert; S. Kamrul Islam; M. Chinthavali	[View] [Download]
Abstract: Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices can not handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide band gap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond with their superior electrical properties are likely candidates to replace Si in the near future. This paper compares all the aforementioned wide bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

	Transit time oscillations as a source of EMC problems in bipolar power devices By R. Siemieniec; J. Lutz; M. Netzel; P. Mourick	[View] [Download]
Abstract: Transit time oscillations may occur in the turn-off phase of power devices and cause high-frequency oscillations. This paper investigates two mechanisms which lead to these oscillations: dynamic impact ionization transit time (IMPATT) oscillations and plasma extraction transit time (PETT) oscillations. Both lead to a deterioration of the EMC behavior and consequently they should be avoided.

	5th generation intelligent power module with CSTBT chip and new control circuit and new package By T. Igarashi; T. Inoue; G. Majumdar; E. Thal	[View] [Download]
Abstract: Energy saving is the most essential feature of any present-day power electronics equipment. Power devices have made remarkable contribution in this aspect since the starting days of their use in power electronics equipment through continuous improvement. Recently, EMI reduction has become one of the most important items in power conversion equipment design, besides the energy saving issue. Because of this trend, the new generation of power components would have to satisfy the contradictory needs of reducing power loss and slow switching speed at the same time. To answer such market needs, we developed the 5th generation Intelligent Power Module (IPM) series by optimally integrating the latest 5th generation IGBT chip technology and a new control circuit topology in a compact housing. This paper provides details of the series’ design features and performances.

	Switching internal dynamics of trench IGBT in ZCS single ended resonant converters By K. Shrestha; D.I.M. de Silva; F. Udrea; G.A.J. Amaratunga; P.R. Palmer	[View] [Download]
Abstract: The Trench IGBT offers advantages over the DMOS IGBT in conventional switching applications. This paper compares the internal dynamic behaviour of the devices in a ZCS single-ended resonant inverter, using 2D numerical simulations and experimental results. Charge removal through the channel during the zero current phase is shown to be an important mechanism governing the magnitude and extent of the forward recovery current during ZCS turn-off. Conclusions are drawn and the improved understanding of internal carrier dynamics will lead to better utilization of Trench IGBT in ZCS single ended resonant converters.

	New generation of vertical MOSFETs for future 12 volts / 42 volts dual batteries in automotive applications By S. Alves; F. Morancho; J-M. Reynès; B. Lopes	[View] [Download]
Abstract: In this paper, a new Vertical N-channel FLIMOSFET dedicated to automotive applications (below 100 Volts) is proposed for the first time: compared to Superjunction devices, this device is relatively simple because only one P Floating Island is introduced in the N- epitaxial region. The “specific onresistance / breakdown voltage” trade-off has been theoretically studied (2D and 3D simulations): it is shown that, even in low voltage applications, the FLIMOSFET exhibits better performance than the conventional VDMOSFET (for instance 30 % improvement of the specific on-resistance for the same breakdown voltage — 85 Volts —) and overcomes the conventional “silicon limit”. This is due to the strong reduction of access (Ra.S) and drift (Rd.S) resistances, because of the increase of the N- epitaxial layer doping concentration in the FLIMOSFET. In other words, in term of “specific on-resistance / breakdown voltage” trade-off, the FLIMOSFET appears to be one of the best MOS device in low voltage applications.

	Integrated voltage sensor for IGBTs protection in short-circuit mode By C. Caramel; P. Austin; J-L. Sanchez; G. Bonnet; M. Breil; E. Imbernon; J. Jalade; J-P. Laur; O. Causse	[View] [Download]
Abstract: Generally, short-circuit protections for isolated gated power switch are provided using a current sensing method with the assistance of analogical discrete devices. In this paper, a new integrated structure allowing detection and protection against short-circuit is proposed. The operating mode of this circuit is based on power device’s anode voltage detection. This voltage detection is made possible by a new integrated sensor called “Anode voltage sensor”. The full circuit is built around the monolithic association of elementary cells like delay-MOS (Md), delay-resistor, and a MOS allowing the IGBT switch-off (Mc). This full circuit can be integrated in the heart of the power switch using Functional Integration mode. The power switch used as test vehicle for 2D simulations of full detection and protection circuit is the IGBT. The anode voltage sensor device has been realized, and first experimental results are presented.

	Fuse and relay replacement by intelligent 2mO RDSON smart power switches By P. Turpin; L. Guillot; M. Cousineau; P. Dupuy; P. Perruchoud	[View] [Download]
Abstract: This paper presents an intelligent ultra low RDSON power switch replacing electromechanical relays in a variety of embedded systems. We will explain how PowerQFN package with multi-chip allows to reduce board space, reach RDSON of 2mW and brings lots of smart feature to increase system reliability. We will also present an innovative over-current strategy which allows to suppress fuses and reduce wire harness bringing a significant cost saving on system.