| Abstract |
The paper deals with the performance determination of a low-voltage power MOSFET in high-current
converter applications, such as voltage regulator modules (VRMs). The device technology is based
on a strip geometry layout that allows a better trade-off between the on-resistance and the gate charge.
First of all, the main characteristics of the new family of MOSFETs are presented and discussed, and
a short description of the main advantages of the new technology is given, focusing on the
innovations. The switching performances are evaluated looking for the user point of view. Moreover,
a detailed experimental investigation of the proposed MOSFET in an actual DC-DC converter
application (VRM) has been carried out. In particular the efficiency of the converter has been
evaluated in order to better understand the improvement obtainable by using the new generation of
high-current, low-voltage MOSFET. |
