| Abstract |
In this paper, a new Vertical N-channel FLIMOSFET dedicated to automotive applications (below
100 Volts) is proposed for the first time: compared to Superjunction devices, this device is relatively
simple because only one P Floating Island is introduced in the N- epitaxial region. The “specific onresistance
/ breakdown voltage” trade-off has been theoretically studied (2D and 3D simulations): it is
shown that, even in low voltage applications, the FLIMOSFET exhibits better performance than the
conventional VDMOSFET (for instance 30 % improvement of the specific on-resistance for the same
breakdown voltage — 85 Volts —) and overcomes the conventional “silicon limit”. This is due to the
strong reduction of access (Ra.S) and drift (Rd.S) resistances, because of the increase of the N- epitaxial
layer doping concentration in the FLIMOSFET. In other words, in term of “specific on-resistance /
breakdown voltage” trade-off, the FLIMOSFET appears to be one of the best MOS device in low
voltage applications. |
