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Switching internal dynamics of trench IGBT in ZCS single ended resonant converters
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| Author(s) |
K. Shrestha; D.I.M. de Silva; F. Udrea; G.A.J. Amaratunga; P.R. Palmer |
| Abstract |
The Trench IGBT offers advantages over the DMOS IGBT in conventional switching applications. This paper compares the internal dynamic behaviour of the devices in a ZCS single-ended resonant inverter, using 2D numerical simulations and experimental results. Charge removal through the channel during the zero current phase is shown to be an important mechanism governing the magnitude and extent of the forward recovery current during ZCS turn-off. Conclusions are drawn and the improved understanding of internal carrier dynamics will lead to better utilization of Trench IGBT in ZCS single ended resonant converters. |
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| Filename: | EPE2003-PP0772 - Shrestha |
| Filesize: | 474.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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