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Integrated voltage sensor for IGBTs protection in short-circuit mode
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| Author(s) |
C. Caramel; P. Austin; J-L. Sanchez; G. Bonnet; M. Breil; E. Imbernon; J. Jalade; J-P. Laur; O. Causse |
| Abstract |
Generally, short-circuit protections for isolated gated power switch are provided using a current
sensing method with the assistance of analogical discrete devices. In this paper, a new integrated
structure allowing detection and protection against short-circuit is proposed. The operating mode of
this circuit is based on power device’s anode voltage detection. This voltage detection is made
possible by a new integrated sensor called “Anode voltage sensor”. The full circuit is built around the
monolithic association of elementary cells like delay-MOS (Md), delay-resistor, and a MOS allowing
the IGBT switch-off (Mc). This full circuit can be integrated in the heart of the power switch using
Functional Integration mode. The power switch used as test vehicle for 2D simulations of full
detection and protection circuit is the IGBT. The anode voltage sensor device has been realized, and
first experimental results are presented. |
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| Filename: | EPE2003-PP1102 - Caramel |
| Filesize: | 434.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-21 by Unknown |
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