| Abstract |
Recent development advances have allowed silicon (Si) semiconductor technology to approach the
theoretical limits of the Si material; however, power device requirements for many applications are at
a point that the present Si-based power devices can not handle. The requirements include higher
blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations,
new semiconductor materials for power device applications are needed. For high power requirements,
wide band gap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond with
their superior electrical properties are likely candidates to replace Si in the near future. This paper
compares all the aforementioned wide bandgap semiconductors with respect to their promise and
applicability for power applications and predicts the future of power device semiconductor materials. |
