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An Active Gate Drive with Three-Stage Control and Fast Protection for High Power IGBTs
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| Author(s) |
Vinod John; B-S. Suh; T. A. Lipo |
| Abstract |
Active gate drive and fault protection technology can be used to obtain high performance switching and fault protection characteristics in IGBTs. This paper presents a three-stage active turn-on and turn-off gate driver integrated with a fast fault current limiting circuit. The proposed three-stage active gate drive technique is verified to be able to operate under the wide range of temperature conditions experienced by the devices. The integrated fast fault protection circuit allows the active gate drive to operate at a higher on-state gate voltage, which leads to reduction of the conduction loss. Also, due to the fault management strategy the active drive circuit can considerably improve the fault endurance capability of the device. |
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| Filename: | EPE1999 - PP00102 - John.pdf |
| Filesize: | 225.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-29 by System |
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