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   High-voltage Cascode Monolithic Switches in QRC Applications   [View] 
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 Author(s)   G. Belverde; A. Galluzzo; M. Melito; S. Musumeci; A. Raciti 
 Abstract   In this paper it is presented a new monolithic device suitable for high-voltage applications based on a bipolar-Power MOSFET cascode connection. The basic device features of this smart-power, emitter-switching component, are described both in terms of physical structure, and electrical performances. The device behaviour is tested in Zero-Voltage (ZV) applications as a benchmark to exp^lore the capability of this high-voltage high-frequency switch. The experimental tests are carried out in particular in a DC-DC boost quasi-resonant converter (QRC) in order to better understanding the improvements and constraints deriving in the actual use of the new component. Finally, the frequency limit of the tested device is compared with those of Power MOSFET and IGBT devices determined in the same application. 
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Filename:EPE1999 - PP00727 - Melito.pdf
Filesize:220.5 KB
 Type   Members Only 
 Date   Last modified 2004-03-31 by System