| |
Long-term Evolution of Power IGBT Component - Experiment and Theory
| [View]
[Download]
|
| Author(s) |
A. Bouzourene; G. Rojat; P-J. Viverge; G. Grellet |
| Abstract |
This paper presents results about the ageing process in the IGBT power transistor. In using
the HTGB (High Temperature Gate Bias) test, we observe that the threshold voltage (VT) increases as
the component ages. Then with the aid of this experimental result and the published theories on trapped
charge process we developed the first mathematical model of the evolution of this electric parameter
(VT) depending on test conditions and ageing time (tstress). The ageing time dependence appears in a
logarithm form such as VT (tstress) = VT (0) + A *Log10 (B*tstress) and give quite good agreement with
experimental results. The coefficients depend on test conditions, we discuss this influence to try to
improve the model. |
| Download |
| Filename: | EPE1999 - PP00174 - Bouzourene.pdf |
| Filesize: | 178.4 KB |
|
| Type |
Members Only |
| Date |
Last modified 2004-03-30 by System |
| |
 |