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Three-Level High-Power Inverters with IGCT and IGBT Elements Compared on the Basis of Measurements of the Device Losses
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| Author(s) |
E. U. Krafft; A. Steimel; J. K. Steinke |
| Abstract |
Voltage source inverter systems equipped with IGBT and IGCT devices contend in the field of medium
and high voltage and high-power applications. Measurements in a synthetic test circuit deliver
parameters for the comparison of high-power medium-voltage three-level inverters employing these
devices. The goal is a trade-off of output power and efficiency vs. switching frequency of the concepts
snubberless IGBT, IGCT with di/dt-limitation and - aiming at series connection - IGCT with
additional dv/dt-snubbers. |
| Download |
| Filename: | EPE1999 - PP00230 - Krafft.pdf |
| Filesize: | 592.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-30 by System |
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