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Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress
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| Author(s) |
S. Azzopardi; J.M. Vinassa; C. Zardini |
| Abstract |
In this paper, we investigate the behavior of Fast and Ultra-Fast 600V Punch-Through IGBT under
Unclamped Inductive Switching stress. These high stress conditions occur when the freewheeling
diode fails. As a consequence, the device is submitted to high current and high voltage
simultaneously. In order to investigate the behaviour of Fast and Ultra-Fast 600V Punch-Through
IGBT, we propose to analyze the effect of the peak collector current and the temperature values.
Under the chosen test conditions, the results show on one hand that the temperature influences the
dynamic breakdown voltage value and also the collector-emitter voltage shape and on the other hand,
that the Ultra-Fast 600V Punch-Through IGBT presents a higher ruggedness than the Fast 600V
Punch-Through IGBT. |
| Download |
| Filename: | EPE1999 - PP00268 - Azzopardi.pdf |
| Filesize: | 331.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-26 by System |
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