EPE Association: EPE 2001 - Topic 01g: New Devices

EPE 2001 - Topic 01g: New Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01g: New Devices

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   A New High Voltage Schottky Diode based on Silicon Carbide (SiC)
By F. Phlippen; B. Burger [View]
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Abstract: The test results of a new high voltage (600 V) SiC based Schottky diode for switch mode power supplies are presented. The diode enables more freedom to the developer with respect to thermal design, switching frequency, efficiency and EMI suppression. The results show the switching characteristics as well as the temperature depending steady state behaviour. The diode is compared with two different types of diodes: a standard Ultra Fast Diode (UFS) and two 300 V Diodes in series (tandem diode). A power factor controller (PFC) has been designed to test the EMI behaviour and efficiency of the PFC only. The PFC has a nominal power of 200 W and an input range from 90 V-264 V. This paper will show that efficiency of the PFC only can be increased from 95,9% to 96,4% at a switching frequency of 100 kHz. The advantage of the SiC device starts from higher switching frequencies on. The EMI behaviour shows that the SiC diode has advantages in the range of 20-30 MHz and above, compared with a standard Ultra Fast diode (UFS).

   A New IGBT with Reverse Blocking Capability
By A. Lindemann [View]
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Abstract: A new IGBT has been developed, providing reverse blocking capability. This feature is needed in various applications, such as in current source inverters, resonant circuits, bidirectional switches or matrix converters. This paper presents technology of the monolithic chip and its operational behaviour, measured with rst samples in typical circuits.

   A Trench SSA-LIGBT on SOI Substrates
By S. P. Choi; B.C. Jeon; W. O. Lee; M. K. Han; Y. I. Choi [View]
[Download]

Abstract: A trench separated shorted anode LIGBT (TSSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the separated shorted anode. The simulation results show that TSSALIGBT decrease the device area by about 20% and the forward voltage drop by over 10% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSSA-LIGBT.

   Design criteria of high voltage superjunction MPS diode
By A. G.M.Strollo; E. Napoli; D. De Caro [View]
[Download]

Abstract: The paper presents a two-dimensional analytical model of superjunction (SJ) devices, giving closed form expression for breakdown voltage. The model is applied to SJ merged PiN Schottky diodes (SJ-MPS) to minimize on- state resistance for a given breakdown voltage. Performances of optimized SJ-MPS devices with voltage rating ranging from 600V to 1.6kV, are analyzed with bidimen- sional numerical simulations and compared to standard PiN, MPS, and Schottky diodes.

   Dynamic behaviour of 4H SiC VJFETs
By B. Weis; M. Braun; P. Friedrichs [View]
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Abstract: In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling diode. Turn-off behaviour of this switch is reported, whereas turn-off means both turning off in “switch” operation as well as turning off in “diode” operation. Finally, short circuit operation of the switch is demonstrated.

   SiC Schottky rectifiers: Performance, reliability and key application
By I. Zverev; M. Treu; H. Kapels; O. Hellmund; R. Rupp [View]
[Download]

Abstract: The thinQ TM SiC Schottky diode is a unipolar power rectifier for blocking voltages up to 600 V and continous forward currents up to 20 A. It offers unique switching behavior even at extreme dI/dtvalues. Characteristics of this new commercially available device will be presented together with encouraging reliability results. As a key application the power factor correction (PFC) has been chosen and system benefits accomplished with this new device will be described.

   The Sensitivity Analysis of the Base Resistance for the BRT Employing Corrugated P-Base
By J-K. Oh; M-S. Lim; W-O. Lee; M.-W. Ha; M-K. Han; Y-I. Choi [View]
[Download]

Abstract: We report the process sensitivity of the self align corrugated p-base resistance which improves the electric characteristics of the CB-BRT and the SB-EST. Experimental results and simulation results show that the process sensitivity of the corrugated p-base resistance is much better than that of the conventional p-base.

   The vertical SiC JFET - a fast and low loss solid state power switch
By P. Friedrichs; H. Mitlehner; R. Schörner; K-O. Dohnke; R. Elpelt; D. Stephani [View]
[Download]

Abstract: Silicon carbide power switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages and the capability of operation at higher junction temperatures are believed to be the most outstanding features of SiC power switching devices. In this paper, vertical JFETs with blocking voltages from 600V up to 3.5kV and a specific on-resistances of 8m§Ùcm©÷ to 26m§Ùcm©÷, are presented. Combining such a device with a low voltage (55V, e.g.) silicon power MOSFET, a rugged normally-off device can be fabricated. However, the commercial use of SiC is currently yet hindered due to the high material costs and therefor enormous device price. Nevertheless, there are additional benefits resulting from the electrical performance which make SiC devices attractive for the application engineer despite its high price. Among others, the authors present fast recovery of the reverse diode, and fast switching as well as short circuit capability in the range of milliseconds for vertical SiC VJFETs.

EPE 2001 - Topic 01g: New Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2001 - Conference > EPE 2001 - Topic 01: DEVICES > EPE 2001 - Topic 01g: New Devices
	[return to parent folder]

	A New High Voltage Schottky Diode based on Silicon Carbide (SiC) By F. Phlippen; B. Burger	[View] [Download]
Abstract: The test results of a new high voltage (600 V) SiC based Schottky diode for switch mode power supplies are presented. The diode enables more freedom to the developer with respect to thermal design, switching frequency, efficiency and EMI suppression. The results show the switching characteristics as well as the temperature depending steady state behaviour. The diode is compared with two different types of diodes: a standard Ultra Fast Diode (UFS) and two 300 V Diodes in series (tandem diode). A power factor controller (PFC) has been designed to test the EMI behaviour and efficiency of the PFC only. The PFC has a nominal power of 200 W and an input range from 90 V-264 V. This paper will show that efficiency of the PFC only can be increased from 95,9% to 96,4% at a switching frequency of 100 kHz. The advantage of the SiC device starts from higher switching frequencies on. The EMI behaviour shows that the SiC diode has advantages in the range of 20-30 MHz and above, compared with a standard Ultra Fast diode (UFS).

	A New IGBT with Reverse Blocking Capability By A. Lindemann	[View] [Download]
Abstract: A new IGBT has been developed, providing reverse blocking capability. This feature is needed in various applications, such as in current source inverters, resonant circuits, bidirectional switches or matrix converters. This paper presents technology of the monolithic chip and its operational behaviour, measured with rst samples in typical circuits.

	A Trench SSA-LIGBT on SOI Substrates By S. P. Choi; B.C. Jeon; W. O. Lee; M. K. Han; Y. I. Choi	[View] [Download]
Abstract: A trench separated shorted anode LIGBT (TSSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the separated shorted anode. The simulation results show that TSSALIGBT decrease the device area by about 20% and the forward voltage drop by over 10% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSSA-LIGBT.

	Design criteria of high voltage superjunction MPS diode By A. G.M.Strollo; E. Napoli; D. De Caro	[View] [Download]
Abstract: The paper presents a two-dimensional analytical model of superjunction (SJ) devices, giving closed form expression for breakdown voltage. The model is applied to SJ merged PiN Schottky diodes (SJ-MPS) to minimize on- state resistance for a given breakdown voltage. Performances of optimized SJ-MPS devices with voltage rating ranging from 600V to 1.6kV, are analyzed with bidimen- sional numerical simulations and compared to standard PiN, MPS, and Schottky diodes.

	Dynamic behaviour of 4H SiC VJFETs By B. Weis; M. Braun; P. Friedrichs	[View] [Download]
Abstract: In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling diode. Turn-off behaviour of this switch is reported, whereas turn-off means both turning off in “switch” operation as well as turning off in “diode” operation. Finally, short circuit operation of the switch is demonstrated.

	SiC Schottky rectifiers: Performance, reliability and key application By I. Zverev; M. Treu; H. Kapels; O. Hellmund; R. Rupp	[View] [Download]
Abstract: The thinQ TM SiC Schottky diode is a unipolar power rectifier for blocking voltages up to 600 V and continous forward currents up to 20 A. It offers unique switching behavior even at extreme dI/dtvalues. Characteristics of this new commercially available device will be presented together with encouraging reliability results. As a key application the power factor correction (PFC) has been chosen and system benefits accomplished with this new device will be described.

	The Sensitivity Analysis of the Base Resistance for the BRT Employing Corrugated P-Base By J-K. Oh; M-S. Lim; W-O. Lee; M.-W. Ha; M-K. Han; Y-I. Choi	[View] [Download]
Abstract: We report the process sensitivity of the self align corrugated p-base resistance which improves the electric characteristics of the CB-BRT and the SB-EST. Experimental results and simulation results show that the process sensitivity of the corrugated p-base resistance is much better than that of the conventional p-base.

	The vertical SiC JFET - a fast and low loss solid state power switch By P. Friedrichs; H. Mitlehner; R. Schörner; K-O. Dohnke; R. Elpelt; D. Stephani	[View] [Download]
Abstract: Silicon carbide power switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages and the capability of operation at higher junction temperatures are believed to be the most outstanding features of SiC power switching devices. In this paper, vertical JFETs with blocking voltages from 600V up to 3.5kV and a specific on-resistances of 8m§Ùcm©÷ to 26m§Ùcm©÷, are presented. Combining such a device with a low voltage (55V, e.g.) silicon power MOSFET, a rugged normally-off device can be fabricated. However, the commercial use of SiC is currently yet hindered due to the high material costs and therefor enormous device price. Nevertheless, there are additional benefits resulting from the electrical performance which make SiC devices attractive for the application engineer despite its high price. Among others, the authors present fast recovery of the reverse diode, and fast switching as well as short circuit capability in the range of milliseconds for vertical SiC VJFETs.