| Abstract |
Silicon carbide power switching devices exhibit superior properties compared to silicon devices. Low
specific on-resistance for high breakdown voltages and the capability of operation at higher junction
temperatures are believed to be the most outstanding features of SiC power switching devices. In this
paper, vertical JFETs with blocking voltages from 600V up to 3.5kV and a specific on-resistances of
8m§Ùcm©÷ to 26m§Ùcm©÷, are presented. Combining such a device with a low voltage (55V, e.g.) silicon
power MOSFET, a rugged normally-off device can be fabricated. However, the commercial use of
SiC is currently yet hindered due to the high material costs and therefor enormous device price.
Nevertheless, there are additional benefits resulting from the electrical performance which make SiC
devices attractive for the application engineer despite its high price. Among others, the authors present
fast recovery of the reverse diode, and fast switching as well as short circuit capability in the range of
milliseconds for vertical SiC VJFETs. |
