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   A New High Voltage Schottky Diode based on Silicon Carbide (SiC)   [View] 
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 Author(s)   F. Phlippen; B. Burger 
 Abstract   The test results of a new high voltage (600 V) SiC based Schottky diode for switch mode power supplies are presented. The diode enables more freedom to the developer with respect to thermal design, switching frequency, efficiency and EMI suppression. The results show the switching characteristics as well as the temperature depending steady state behaviour. The diode is compared with two different types of diodes: a standard Ultra Fast Diode (UFS) and two 300 V Diodes in series (tandem diode). A power factor controller (PFC) has been designed to test the EMI behaviour and efficiency of the PFC only. The PFC has a nominal power of 200 W and an input range from 90 V-264 V. This paper will show that efficiency of the PFC only can be increased from 95,9% to 96,4% at a switching frequency of 100 kHz. The advantage of the SiC device starts from higher switching frequencies on. The EMI behaviour shows that the SiC diode has advantages in the range of 20-30 MHz and above, compared with a standard Ultra Fast diode (UFS). 
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Filename:EPE2001 - PP00259 - Phlippen.pdf
Filesize:437.8 KB
 Type   Members Only 
 Date   Last modified 2004-03-10 by System