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Design criteria of high voltage superjunction MPS diode
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| Author(s) |
A. G.M.Strollo; E. Napoli; D. De Caro |
| Abstract |
The paper presents a two-dimensional analytical model of superjunction (SJ)
devices, giving closed form expression for breakdown voltage.
The model is applied to SJ merged PiN Schottky diodes (SJ-MPS) to minimize on-
state resistance for a given breakdown voltage. Performances of optimized SJ-MPS
devices with voltage rating ranging from 600V to 1.6kV, are analyzed with bidimen-
sional numerical simulations and compared to standard PiN, MPS, and Schottky
diodes. |
| Download |
| Filename: | EPE2001 - PP00746 - Napoli.pdf |
| Filesize: | 240.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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