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A Trench SSA-LIGBT on SOI Substrates
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| Author(s) |
S. P. Choi; B.C. Jeon; W. O. Lee; M. K. Han; Y. I. Choi |
| Abstract |
A trench separated shorted anode LIGBT (TSSA-LIGBT) which decreases the device area and the
forward voltage drop has been proposed and verified by 2D device simulations. The trench located in
the shorted anode would form the separated shorted anode. The simulation results show that TSSALIGBT
decrease the device area by about 20% and the forward voltage drop by over 10% compared
with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has
been eliminated successfully in the TSSA-LIGBT. |
| Download |
| Filename: | EPE2001 - PP00643 - Choi.pdf |
| Filesize: | 113.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
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