| |
Dynamic behaviour of 4H SiC VJFETs
| [View]
[Download]
|
| Author(s) |
B. Weis; M. Braun; P. Friedrichs |
| Abstract |
In this paper, the dynamic characteristics of a SiC switching power device are described. The switch
is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET
and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling diode.
Turn-off behaviour of this switch is reported, whereas turn-off means both turning off in “switch”
operation as well as turning off in “diode” operation. Finally, short circuit operation of the switch is
demonstrated. |
| Download |
| Filename: | EPE2001 - PP00386 - Weis.pdf |
| Filesize: | 125.6 KB |
|
| Type |
Members Only |
| Date |
Last modified 2004-03-10 by System |
| |
 |