EPE Association: EPE 1989 - 11 - Lecture Session 2.4: POWER ELECTRONICS DRIVES

EPE 1989 - 11 - Lecture Session 2.4: POWER ELECTRONICS DRIVES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1989 - Conference > EPE 1989 - 11 - Lecture Session 2.4: POWER ELECTRONICS DRIVES

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   THE NEW GENERATION OF MOS POWER TRANSISTORS AND THE BENEFITS OF THEIR APPLICATION
By K. Reinmuth; L. Lorenz [View]
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Abstract: The many advantages of MOS controlled transistors have been familiar to the user for years. However, their drawbacks haven been their extreme sensitivity to exessive voltage, and the restriction set by dv/dt and di/dt limits. This paper will show how voltage resistance in the power MOSFET has been increased. It will also discuss the threshold conditions under which it has been possible to increase current and voltage gradients. With the help of semiconductor structure diagrams, physical behavior at voltage breakdown will be explained.

   IGBT-MODULES: CONCEPT - GATE DRIVE - FAULT PROTECTION
By Werner Bösterling; Franz Kaussen; Karl Heinz Sommer; Martin Tscharn [View]
[Download]

Abstract: Modern inverter technology is increasingly using power modules with Insulated Gate Bipolar Transistors (IGBT-modules). Switching properties and availability have paved the way for this development. The paper describes features and properties of IGBTs and the optimization of the module configuration. It further refers to the functions of the control electronics, possibilities of gate drive and methods of overvoltage and overcurrent protection. The objective being to provide suggestions relating to the rational and efficient design of the accessories of IGBT-modules in inverters.

   SEMICONDUCTOR DEVICES FOR HIGH POWER PULSED SWITCHING
By J.-L. Steiner; J. Vitins [View]
[Download]

Abstract: High pulsed power is becoming increasing to supply various different types of lasers or electromagnetic launchers. Until recently the switching devices have been thyratrons, ignitrons or other gas tubes. Recent advances in power semiconductor development now make these new devices a promising alternative. Reverse conducting thyristors, gate turn-off thyristors and larger high power thyristors were analysed. The design of these devices and the circuit requirements are described with respect to their new pulsed switching application. Also, theoretical calculations are presented which allow the determination of power losses and current capability for specific application conditions.

   IMPROVED REVERSE RECOVERY OF FAST POWER DIODES HAVING A SELF-ADJUSTING P EMITTER EFFICIENCY
By H. Schlangenotto; J. Serafin; F. Sawitzki; H. Maeder [View]
[Download]

Abstract: A fast pnn+ power diode is presented, which shows a significantly improved reverse recovery behaviour. The p layer of this diode consists of a p+ region of high injection efficiency and a p region of low efficiency which densely intersperses the p region. Both regions are contacted by a common anode metal layer. The lateral extension of the p boundary and the doping profile of the p region are chosen in such a manner that the high efficiency of the p+ region becomes effective at high currents only. Up to the normal operative forward current, the overall p emitter efficiency and hence the carrier concentration at the anode side of the base region is small. By commutation, this results in a strong reduction of the peak reverse current and a significantly softer reverse current decay compared to standard diodes designed for the same forward and blocking voltages. Measurements of switching properties and on the operation principle are presented together with modeling results,

   POWER DIODES ON GALLIUM ARSENIDE
By G. A. Ashkinazi; L. J. Zolotarevski; L. D. Mazo; V. N. Timofeev; M. l. Shulga; V. N. Shumilin [View]
[Download]

Abstract: Present article considers the parameters and characteristics of the power high-temperature fast recovery gallium arsenide diodes with p-n junction and Schottky diodes. This devices have the junction temperature up to 260°C and reverse recovery time up to 50 ns. There are given the preferences of application of this devices.

   A PRACTICAL EVALUATION OF NON-LINEAR SNUBBERS USING MULTI-LAYER CERAMIC CAPACITORS
By Rex M. Davis; W. F. Ray; Ruth M. Jeffers [View]
[Download]

Abstract: Multi-layer ceramic capacitors (MLC's) exhibit a reduction of capacitance as the voltage increases. When MLC's are used as RCD snubbers for GTO's or other semiconductor switching devices, the energy lost at snubber discharge can be reduced up to 10 times compared with linear capacitors. The paper provides experimental verification of the benefits of MLC snubbers for a fast GTO. The influence of increasing dV/dt on tail current is shown to be small. Experimental results at rated junction temperature reveal the sensitivity of tail current with temperature under enhanced dV/dt stress, but the tall current is only slightly increased compared with that using a linear snubber.

EPE 1989 - 11 - Lecture Session 2.4: POWER ELECTRONICS DRIVES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1989 - Conference > EPE 1989 - 11 - Lecture Session 2.4: POWER ELECTRONICS DRIVES
	[return to parent folder]

	THE NEW GENERATION OF MOS POWER TRANSISTORS AND THE BENEFITS OF THEIR APPLICATION By K. Reinmuth; L. Lorenz	[View] [Download]
Abstract: The many advantages of MOS controlled transistors have been familiar to the user for years. However, their drawbacks haven been their extreme sensitivity to exessive voltage, and the restriction set by dv/dt and di/dt limits. This paper will show how voltage resistance in the power MOSFET has been increased. It will also discuss the threshold conditions under which it has been possible to increase current and voltage gradients. With the help of semiconductor structure diagrams, physical behavior at voltage breakdown will be explained.

	IGBT-MODULES: CONCEPT - GATE DRIVE - FAULT PROTECTION By Werner Bösterling; Franz Kaussen; Karl Heinz Sommer; Martin Tscharn	[View] [Download]
Abstract: Modern inverter technology is increasingly using power modules with Insulated Gate Bipolar Transistors (IGBT-modules). Switching properties and availability have paved the way for this development. The paper describes features and properties of IGBTs and the optimization of the module configuration. It further refers to the functions of the control electronics, possibilities of gate drive and methods of overvoltage and overcurrent protection. The objective being to provide suggestions relating to the rational and efficient design of the accessories of IGBT-modules in inverters.

	SEMICONDUCTOR DEVICES FOR HIGH POWER PULSED SWITCHING By J.-L. Steiner; J. Vitins	[View] [Download]
Abstract: High pulsed power is becoming increasing to supply various different types of lasers or electromagnetic launchers. Until recently the switching devices have been thyratrons, ignitrons or other gas tubes. Recent advances in power semiconductor development now make these new devices a promising alternative. Reverse conducting thyristors, gate turn-off thyristors and larger high power thyristors were analysed. The design of these devices and the circuit requirements are described with respect to their new pulsed switching application. Also, theoretical calculations are presented which allow the determination of power losses and current capability for specific application conditions.

	IMPROVED REVERSE RECOVERY OF FAST POWER DIODES HAVING A SELF-ADJUSTING P EMITTER EFFICIENCY By H. Schlangenotto; J. Serafin; F. Sawitzki; H. Maeder	[View] [Download]
Abstract: A fast pnn+ power diode is presented, which shows a significantly improved reverse recovery behaviour. The p layer of this diode consists of a p+ region of high injection efficiency and a p region of low efficiency which densely intersperses the p region. Both regions are contacted by a common anode metal layer. The lateral extension of the p boundary and the doping profile of the p region are chosen in such a manner that the high efficiency of the p+ region becomes effective at high currents only. Up to the normal operative forward current, the overall p emitter efficiency and hence the carrier concentration at the anode side of the base region is small. By commutation, this results in a strong reduction of the peak reverse current and a significantly softer reverse current decay compared to standard diodes designed for the same forward and blocking voltages. Measurements of switching properties and on the operation principle are presented together with modeling results,

	POWER DIODES ON GALLIUM ARSENIDE By G. A. Ashkinazi; L. J. Zolotarevski; L. D. Mazo; V. N. Timofeev; M. l. Shulga; V. N. Shumilin	[View] [Download]
Abstract: Present article considers the parameters and characteristics of the power high-temperature fast recovery gallium arsenide diodes with p-n junction and Schottky diodes. This devices have the junction temperature up to 260°C and reverse recovery time up to 50 ns. There are given the preferences of application of this devices.

	A PRACTICAL EVALUATION OF NON-LINEAR SNUBBERS USING MULTI-LAYER CERAMIC CAPACITORS By Rex M. Davis; W. F. Ray; Ruth M. Jeffers	[View] [Download]
Abstract: Multi-layer ceramic capacitors (MLC's) exhibit a reduction of capacitance as the voltage increases. When MLC's are used as RCD snubbers for GTO's or other semiconductor switching devices, the energy lost at snubber discharge can be reduced up to 10 times compared with linear capacitors. The paper provides experimental verification of the benefits of MLC snubbers for a fast GTO. The influence of increasing dV/dt on tail current is shown to be small. Experimental results at rated junction temperature reveal the sensitivity of tail current with temperature under enhanced dV/dt stress, but the tall current is only slightly increased compared with that using a linear snubber.