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   SEMICONDUCTOR DEVICES FOR HIGH POWER PULSED SWITCHING   [View] 
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 Author(s)   J.-L. Steiner; J. Vitins 
 Abstract   High pulsed power is becoming increasing to supply various different types of lasers or electromagnetic launchers. Until recently the switching devices have been thyratrons, ignitrons or other gas tubes. Recent advances in power semiconductor development now make these new devices a promising alternative. Reverse conducting thyristors, gate turn-off thyristors and larger high power thyristors were analysed. The design of these devices and the circuit requirements are described with respect to their new pulsed switching application. Also, theoretical calculations are presented which allow the determination of power losses and current capability for specific application conditions. 
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Filename:Unnamed file
Filesize:605.2 KB
 Type   Members Only 
 Date   Last modified 2021-02-23 by System