| Abstract |
The many advantages of MOS controlled transistors have been familiar to the user for years. However, their drawbacks haven been their extreme sensitivity to exessive voltage, and the restriction set by dv/dt and di/dt limits. This paper will show how voltage resistance in the power MOSFET has been increased. It will also discuss the threshold conditions under which it has been possible to increase current and voltage gradients. With the help of semiconductor structure diagrams, physical behavior at voltage breakdown will be explained. |
