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IMPROVED REVERSE RECOVERY OF FAST POWER DIODES HAVING A SELF-ADJUSTING P EMITTER EFFICIENCY
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| Author(s) |
H. Schlangenotto; J. Serafin; F. Sawitzki; H. Maeder |
| Abstract |
A fast pnn+ power diode is presented, which shows a significantly improved reverse recovery behaviour. The p layer of this diode consists of a p+ region of high injection efficiency and a p region of low efficiency which densely intersperses the p region. Both regions are contacted by a common anode metal layer. The lateral extension of the p boundary and the doping profile of the p region are chosen in such a manner that the high efficiency of the p+ region becomes effective at high currents only. Up to the normal operative forward current, the overall p emitter efficiency and hence the carrier concentration at the anode side of the base region is small. By commutation, this results in a strong reduction of the peak reverse current and a significantly softer reverse current decay compared to standard diodes designed for the same forward and blocking voltages. Measurements of switching properties and on the operation principle are presented together with modeling results, |
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| Filename: | Unnamed file |
| Filesize: | 782.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-23 by System |
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