| |
POWER DIODES ON GALLIUM ARSENIDE
| [View]
[Download]
|
| Author(s) |
G. A. Ashkinazi; L. J. Zolotarevski; L. D. Mazo; V. N. Timofeev; M. l. Shulga; V. N. Shumilin |
| Abstract |
Present article considers the parameters and characteristics of the power high-temperature fast recovery gallium arsenide diodes with p-n junction and Schottky diodes. This devices have the junction temperature up to 260°C and reverse recovery time up to 50 ns. There are given the preferences of application of this devices. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 275 KB |
|
| Type |
Members Only |
| Date |
Last modified 2021-02-23 by System |
| |
 |