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IGBT-MODULES: CONCEPT - GATE DRIVE - FAULT PROTECTION
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| Author(s) |
Werner Bösterling; Franz Kaussen; Karl Heinz Sommer; Martin Tscharn |
| Abstract |
Modern inverter technology is increasingly using power modules with Insulated Gate Bipolar Transistors (IGBT-modules). Switching properties and availability have paved the way for this development. The paper describes features and properties of IGBTs and the optimization of the module configuration. It further refers to the functions of the control electronics, possibilities of gate drive and methods of overvoltage and overcurrent protection. The objective being to provide suggestions relating to the rational and efficient design of the accessories of IGBT-modules in inverters. |
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| Filename: | Unnamed file |
| Filesize: | 658.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2021-02-23 by System |
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