EPE Association: EPE-PEMC 2002: Special Session: Present Status of Power Devices and Future Possibility

EPE-PEMC 2002: Special Session: Present Status of Power Devices and Future Possibility
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2002 - Conference > EPE-PEMC 2002: Special Session: Present Status of Power Devices and Future Possibility

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   An Integrated Approach to Power Electronics Systems
By D. Boroyevich; R. D. Lorenz; T. P. Chow; R. J. Gutmann; P. Barbosa; F. C. Lee; J. D. Van Wyk; T. M. Jahns [View]
[Download]

Abstract: Today’s power electronics systems are typically manufactured using non-standard parts, resulting in labor-intensive manufacturing processes, increased cost and poor reliability. As a possible way to overcome these problems, this paper discusses an integrated approach to design and manufacture power electronics systems to improve performance, reliability and cost effectiveness. Addressed in the paper are the technologies being developed for integration of both power supplies and motor drives. These technologies include the planar metalization to eliminate bonding wires, the integration of power passives, the integration of current sensors, the development of power devices to facilitate integration as well as to improve performance, and the integration of necessary CAD tools to address the multidisciplinary aspects of integrated systems. The development of Integrated Power Electronics Modules (IPEMs) is demonstrated for two applications: (1) 1kW asymmetrical half-bridge DC/DC converter and (2) 1-3kW motor drive for heating, ventilation and air conditioning (HVAC). Electrical and thermal design tradeoffs of IPEMs and related enabling technologies are described in the paper.

   High Voltage MOS-gated Devices (IGBT/IEGT): Present Status and Future Possibility
By T. Ogura; H. Ohashi; K. Ichikawa [View]
[Download]

Abstract: IGBT/IEGT has been replacing GTO in high-power electronics applications. We have developed major technologies to improve device characteristics of IGBT/IEGT; these are an injection enhancement effect (IE-effect) for emitter side and an injection control design for collector side. Device physics and experimental results are discussed. High rugged capability of IEGT is also presented. We also introduce an application example of IEGT for three-level inverters. In conclusion, a future possibility of IGBT/IEGT is discussed at high-power electronics applications.

   High-Voltage SiC and GaN Devices for Power Electronics Applications
By T. P. Chow [View]
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Abstract: SiC and GaN semiconductor power devices are very promising in offering more than an order of magnitude in power loss improvement in power electronics systems, when compared to conventional silicon devices, due to their enhanced material properties, such as high avalanche field and thermal conductivity. The recent progress in experimental device demonstration and projected device performance will be reviewed. Innovative device structures that have been proposed to unique exploit the properties of these semiconductors will be presented. Reliability issues concerning long-term operation will be discussed.

   Key Milestone in the development of Power Semiconductors
By L. Lorenz [View]
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Abstract: The new CoolMOS C3 generation combines ectremely high on state conductivity with ultra fast switching speed at full pulse current capability. In many applications the outstanding switching performance of the CoolMOS can't be utilized due to the dynamic beha-viour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diodes. The new IGBT and EMCON-diode family covers the whole power rating from 1A ¡Ü I ¡Ü 3600A and 600V ¡Ü VB1 ¡Ü6500V. Especially the FS-NPT-IGBT-technology shows an outstanding rug-gedness behaviour e.g. temperature stability, lutch up free, short circuit capability is easy in pa-ralleling but dependent on the voltage rating certain requirements have to be considered. While the switching speed of the low voltage devices (600V, 1200V, 1700V) is almost unlimited spe-cial care has to be taken by the high voltage devices. By a vertical shrink of the NPT ICBT to a structure with a thin n- base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the comibination of the field stop concept with the trench transistor cell results in the almost ideal carrier concentration for adevice with minimum on state voltage and lowest switching losses.

   MOSFETs for POWER ICs: Present Status and Future Development
By R. Ng; F. Udrea [View]
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Abstract: This paper reviews the current status of high voltage power semiconductor devices in power integrated circuits (PICs) and outlines some of the possible paths along which development in Power MOSFETs would take place in the near future. In addition novel RESURF concepts and state of art silicon technologies such as high voltage Silicon on Insulator (SOI) which are expected to play an increasingly important role in the realisation of the power system on chip concept will also be discussed in depth. The paper also examines one of the most exciting new technologies, namely the CoolMOS/3D-RESURF technology and its applicability to high voltage PICs.

   Prospects of the National Project of Ultra-Low-Loss Power Device Technology in Japan
By K. Arai [View]
[Download]

Abstract: The national project of “R&D of Ultra-Low-Loss Power Device Technologies (UPD)” was started on October 1998 as the 5 year project to establish the fundamental technologies on the power device applications of the wide bandgap semiconductors, focusing on SiC. Aims of the project are consisting of two parts. One is the basic research for developing innovative technologies required to realize practical uses of SiC power devices, which include bulk crystal growth, device processing, and device design and evaluation. The other is to develop fundamental device technologies demonstrating the superiority of the SiC devices to Si devices in three fundamental devices such as pn junction FET, MOSFET and MESFET. In this paper the recent progress and the future scope of the project are presented.

EPE-PEMC 2002: Special Session: Present Status of Power Devices and Future Possibility
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2002 - Conference > EPE-PEMC 2002: Special Session: Present Status of Power Devices and Future Possibility
	[return to parent folder]

	An Integrated Approach to Power Electronics Systems By D. Boroyevich; R. D. Lorenz; T. P. Chow; R. J. Gutmann; P. Barbosa; F. C. Lee; J. D. Van Wyk; T. M. Jahns	[View] [Download]
Abstract: Today’s power electronics systems are typically manufactured using non-standard parts, resulting in labor-intensive manufacturing processes, increased cost and poor reliability. As a possible way to overcome these problems, this paper discusses an integrated approach to design and manufacture power electronics systems to improve performance, reliability and cost effectiveness. Addressed in the paper are the technologies being developed for integration of both power supplies and motor drives. These technologies include the planar metalization to eliminate bonding wires, the integration of power passives, the integration of current sensors, the development of power devices to facilitate integration as well as to improve performance, and the integration of necessary CAD tools to address the multidisciplinary aspects of integrated systems. The development of Integrated Power Electronics Modules (IPEMs) is demonstrated for two applications: (1) 1kW asymmetrical half-bridge DC/DC converter and (2) 1-3kW motor drive for heating, ventilation and air conditioning (HVAC). Electrical and thermal design tradeoffs of IPEMs and related enabling technologies are described in the paper.

	High Voltage MOS-gated Devices (IGBT/IEGT): Present Status and Future Possibility By T. Ogura; H. Ohashi; K. Ichikawa	[View] [Download]
Abstract: IGBT/IEGT has been replacing GTO in high-power electronics applications. We have developed major technologies to improve device characteristics of IGBT/IEGT; these are an injection enhancement effect (IE-effect) for emitter side and an injection control design for collector side. Device physics and experimental results are discussed. High rugged capability of IEGT is also presented. We also introduce an application example of IEGT for three-level inverters. In conclusion, a future possibility of IGBT/IEGT is discussed at high-power electronics applications.

	High-Voltage SiC and GaN Devices for Power Electronics Applications By T. P. Chow	[View] [Download]
Abstract: SiC and GaN semiconductor power devices are very promising in offering more than an order of magnitude in power loss improvement in power electronics systems, when compared to conventional silicon devices, due to their enhanced material properties, such as high avalanche field and thermal conductivity. The recent progress in experimental device demonstration and projected device performance will be reviewed. Innovative device structures that have been proposed to unique exploit the properties of these semiconductors will be presented. Reliability issues concerning long-term operation will be discussed.

	Key Milestone in the development of Power Semiconductors By L. Lorenz	[View] [Download]
Abstract: The new CoolMOS C3 generation combines ectremely high on state conductivity with ultra fast switching speed at full pulse current capability. In many applications the outstanding switching performance of the CoolMOS can't be utilized due to the dynamic beha-viour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diodes. The new IGBT and EMCON-diode family covers the whole power rating from 1A ¡Ü I ¡Ü 3600A and 600V ¡Ü VB1 ¡Ü6500V. Especially the FS-NPT-IGBT-technology shows an outstanding rug-gedness behaviour e.g. temperature stability, lutch up free, short circuit capability is easy in pa-ralleling but dependent on the voltage rating certain requirements have to be considered. While the switching speed of the low voltage devices (600V, 1200V, 1700V) is almost unlimited spe-cial care has to be taken by the high voltage devices. By a vertical shrink of the NPT ICBT to a structure with a thin n- base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the comibination of the field stop concept with the trench transistor cell results in the almost ideal carrier concentration for adevice with minimum on state voltage and lowest switching losses.

	MOSFETs for POWER ICs: Present Status and Future Development By R. Ng; F. Udrea	[View] [Download]
Abstract: This paper reviews the current status of high voltage power semiconductor devices in power integrated circuits (PICs) and outlines some of the possible paths along which development in Power MOSFETs would take place in the near future. In addition novel RESURF concepts and state of art silicon technologies such as high voltage Silicon on Insulator (SOI) which are expected to play an increasingly important role in the realisation of the power system on chip concept will also be discussed in depth. The paper also examines one of the most exciting new technologies, namely the CoolMOS/3D-RESURF technology and its applicability to high voltage PICs.

	Prospects of the National Project of Ultra-Low-Loss Power Device Technology in Japan By K. Arai	[View] [Download]
Abstract: The national project of “R&D of Ultra-Low-Loss Power Device Technologies (UPD)” was started on October 1998 as the 5 year project to establish the fundamental technologies on the power device applications of the wide bandgap semiconductors, focusing on SiC. Aims of the project are consisting of two parts. One is the basic research for developing innovative technologies required to realize practical uses of SiC power devices, which include bulk crystal growth, device processing, and device design and evaluation. The other is to develop fundamental device technologies demonstrating the superiority of the SiC devices to Si devices in three fundamental devices such as pn junction FET, MOSFET and MESFET. In this paper the recent progress and the future scope of the project are presented.