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High Voltage MOS-gated Devices (IGBT/IEGT): Present Status and Future Possibility
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| Author(s) |
T. Ogura; H. Ohashi; K. Ichikawa |
| Abstract |
IGBT/IEGT has been replacing GTO in high-power electronics applications. We have developed
major technologies to improve device characteristics of IGBT/IEGT; these are an injection
enhancement effect (IE-effect) for emitter side and an injection control design for collector side.
Device physics and experimental results are discussed. High rugged capability of IEGT is also
presented. We also introduce an application example of IEGT for three-level inverters. In conclusion,
a future possibility of IGBT/IEGT is discussed at high-power electronics applications. |
| Download |
| Filename: | EPE-PEMC2002 - SSHO-03 - Ogura.pdf |
| Filesize: | 493 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-12 by System |
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