| Abstract |
SiC and GaN semiconductor power devices are very promising in offering more than an order of magnitude in power loss improvement in power electronics systems, when compared to conventional silicon devices, due to their enhanced material properties, such as high avalanche field and thermal conductivity. The recent progress in experimental device demonstration and projected device performance will be reviewed. Innovative device structures that have been proposed to unique exploit the properties of these semiconductors will be presented. Reliability issues concerning long-term operation will be discussed. |
