| Abstract |
The new CoolMOS C3 generation combines ectremely high on state conductivity with ultra fast switching speed at full pulse current capability. In many applications the outstanding switching performance of the CoolMOS can't be utilized due to the dynamic beha-viour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diodes. The new IGBT and EMCON-diode family covers the whole power rating from 1A ¡Ü I ¡Ü 3600A and 600V ¡Ü VB1 ¡Ü6500V. Especially the FS-NPT-IGBT-technology shows an outstanding rug-gedness behaviour e.g. temperature stability, lutch up free, short circuit capability is easy in pa-ralleling but dependent on the voltage rating certain requirements have to be considered. While the switching speed of the low voltage devices (600V, 1200V, 1700V) is almost unlimited spe-cial care has to be taken by the high voltage devices. By a vertical shrink of the NPT ICBT to a structure with a thin n- base and a low doped field stop layer a new IGBT can be realized with drastically reduced overall losses. Especially the comibination of the field stop concept with the trench transistor cell results in the almost ideal carrier concentration for adevice with minimum on state voltage and lowest switching losses. |
