| Abstract |
The national project of “R&D of Ultra-Low-Loss Power Device Technologies (UPD)” was started on October 1998 as the 5 year project to establish the fundamental technologies on the power device applications of the wide bandgap semiconductors, focusing on SiC. Aims of the project are consisting of two parts. One is the basic research for developing innovative technologies required to realize practical uses of SiC power devices, which include bulk crystal growth, device processing, and device design and evaluation. The other is to develop fundamental device technologies demonstrating the superiority of the SiC devices to Si devices in three fundamental devices such as pn junction FET, MOSFET and MESFET. In this paper the recent progress and the future scope of the project are presented. |
