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   MOSFETs for POWER ICs: Present Status and Future Development   [View] 
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 Author(s)   R. Ng; F. Udrea 
 Abstract   This paper reviews the current status of high voltage power semiconductor devices in power integrated circuits (PICs) and outlines some of the possible paths along which development in Power MOSFETs would take place in the near future. In addition novel RESURF concepts and state of art silicon technologies such as high voltage Silicon on Insulator (SOI) which are expected to play an increasingly important role in the realisation of the power system on chip concept will also be discussed in depth. The paper also examines one of the most exciting new technologies, namely the CoolMOS/3D-RESURF technology and its applicability to high voltage PICs. 
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Filename:EPE-PEMC2002 - SSHO-02 - Ng.pdf
Filesize:638.9 KB
 Type   Members Only 
 Date   Last modified 2004-05-12 by System