EPE Association: EPE-PEMC 2000 - Topic 02a: Power Discrete Devices

EPE-PEMC 2000 - Topic 02a: Power Discrete Devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2000 - Conference > EPE-PEMC 2000 - Topic 02: Semiconductor Devices > EPE-PEMC 2000 - Topic 02a: Power Discrete Devices

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   A Pseudo-MOS/SOI Transistor with Two Inversion Channels
By Ravariu C., Ravariu F.*, Rusu A., Dobrescu D., Dobrescu L. [View]
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Abstract: The Pseudo-MOS transistor (y-MOSFET) can be achieved on all SOI structure, without any lithographic technique. The aim of this paper is to highlight an analytical model of an y-MOSFET with two inversion channels. A possible application is in the domain of the multi-layer SOI devices and power-SOI devices when both inversion channels are exploited. The model was compared with PISCES simulations.

   An Analysis of Trench Corner Structure Using Hydrogen Annealing for Highly Reliable Trench DMOSFETs
By Kim S.G., Kim J., Nam K.S., Lee S.Y.*, Koo J.G., Cho K.I. [View]
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Abstract: A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.

   Clustered Insulated Gate Bipolar Transistor (CIGBT) - a New Power Semiconductor Device
By Sweet M., Spulber O., De Souza M.M., Chandra Bose S., Sankara Narayanan E.M. [View]
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Abstract: For the first time, we demonstrate a new MOS controlled power device, called the Clustered IGBT, with superior on-state and switching characteristics than that of an IGBT. The additional n and p wells provide a unique self-clamping feature that protects the cathode from any surge current or voltage and improves its safe operating area.

   Optimum Carrier Distribution of the IGBT
By Sheng K., Udrea F., Amaratunga G.A.J. [View]
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Abstract: In this paper, optimum base carrier istributions of the IGBT for best trade-off between the on-state voltage and turn-off loss are calculated by an analytical model without using a numerical simulator for the first time. It is found that, in contrast to a typical IGBT design, the optimum carrier distribution has a significantly higher carrier concentration at the cathode end of the device than that at the anode end. The results, which are supported by 2-D numerical simulations and experiments, provide an interesting guideline for optimizing the IGBT. Practical considerations of the predicted optimum design are discussed.

   PT and NPT IGBTs up to 1.2kV: Which is Optimum?
By Sheng K., Udrea F., Huang S., Trajkovic T., Amaratunga G.A.J., Waind P.* [View]
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Abstract: A performance and reliability comparison of punch-through (PT) and non-punch-through (NPT) IGBTs by experimental analysis supported by numerical simulation is presented in this paper for both 600V and 1.2kV rated devices. Thermal effects were given special considerations during investigation of device reliability under high frequency operation and short circuit conditions.

EPE-PEMC 2000 - Topic 02a: Power Discrete Devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2000 - Conference > EPE-PEMC 2000 - Topic 02: Semiconductor Devices > EPE-PEMC 2000 - Topic 02a: Power Discrete Devices
	[return to parent folder]

	A Pseudo-MOS/SOI Transistor with Two Inversion Channels By Ravariu C., Ravariu F., Rusu A., Dobrescu D., Dobrescu L.*	[View] [Download]
Abstract: The Pseudo-MOS transistor (y-MOSFET) can be achieved on all SOI structure, without any lithographic technique. The aim of this paper is to highlight an analytical model of an y-MOSFET with two inversion channels. A possible application is in the domain of the multi-layer SOI devices and power-SOI devices when both inversion channels are exploited. The model was compared with PISCES simulations.

	An Analysis of Trench Corner Structure Using Hydrogen Annealing for Highly Reliable Trench DMOSFETs By Kim S.G., Kim J., Nam K.S., Lee S.Y., Koo J.G., Cho K.I.*	[View] [Download]
Abstract: A new trench corner rounding technique has been developed by using pull-back and hydrogen annealing process. This technique provides highly controllable trench corner rounding by micro structure transformation of silicon at the corner of the trench, leading to uniform gate oxide, higher breakdown voltage, and lower leakage current.

	Clustered Insulated Gate Bipolar Transistor (CIGBT) - a New Power Semiconductor Device By Sweet M., Spulber O., De Souza M.M., Chandra Bose S., Sankara Narayanan E.M.	[View] [Download]
Abstract: For the first time, we demonstrate a new MOS controlled power device, called the Clustered IGBT, with superior on-state and switching characteristics than that of an IGBT. The additional n and p wells provide a unique self-clamping feature that protects the cathode from any surge current or voltage and improves its safe operating area.

	Optimum Carrier Distribution of the IGBT By Sheng K., Udrea F., Amaratunga G.A.J.	[View] [Download]
Abstract: In this paper, optimum base carrier istributions of the IGBT for best trade-off between the on-state voltage and turn-off loss are calculated by an analytical model without using a numerical simulator for the first time. It is found that, in contrast to a typical IGBT design, the optimum carrier distribution has a significantly higher carrier concentration at the cathode end of the device than that at the anode end. The results, which are supported by 2-D numerical simulations and experiments, provide an interesting guideline for optimizing the IGBT. Practical considerations of the predicted optimum design are discussed.

	PT and NPT IGBTs up to 1.2kV: Which is Optimum? By Sheng K., Udrea F., Huang S., Trajkovic T., Amaratunga G.A.J., Waind P.*	[View] [Download]
Abstract: A performance and reliability comparison of punch-through (PT) and non-punch-through (NPT) IGBTs by experimental analysis supported by numerical simulation is presented in this paper for both 600V and 1.2kV rated devices. Thermal effects were given special considerations during investigation of device reliability under high frequency operation and short circuit conditions.